Au Optronics Corporation

Industrial Technology Research Institute

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Tpo Displays Corporation

Taiwan Tft Lcd Association

Sai-Chang Liu

Chien-Wei Wu

Cheng-Tzu Yang

Hsiang-Chih Hsiao

Shuo-Wei Liang

Yu-Hsing Liang

Ching-Yang Liu

Wei-Hsiang Lin

Shu-Wei Chu

Jhih-Jie Huang

A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

Pixel structure and electrical bridging structure

A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

Method of fabricating thin film transistor

An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

Method of fabricating a thin film transistor

Growing community of inventors

Kaohsiung County, Taiwan

Sai-Chang Liu