Applied Materials, Inc.

Sai Abhinand

James S Papanu

Vibhu Jindal

Jungrae Park

Shuwei Liu

Eng Sheng Peh

Karthik Elumalai

Karthik Balakrishnan

Cheng Sun

Ke Chang

Zavier Zai Yeong Tan

Dimantha Rajapaksa

Gaurav Mehta

Hui Ni Grace Fong

Onkara Korasiddaramaiah

Michael Sorensen

Sri Thirunavukarasu

Embodiments of the present disclosure include methods of determining scribing offsets in a hybrid laser scribing and plasma dicing process. In an embodiment, the method comprises forming a mask above a semiconductor wafer. In an embodiment, the semiconductor wafer comprises a plurality of dies separated from each other by streets. In an embodiment, the method further comprises patterning the mask and the semiconductor wafer with a laser scribing process. In an embodiment, the patterning provides openings in the streets. In an embodiment, the method further comprises removing the mask, and measuring scribing offsets of the openings relative to the streets.

Automatic kerf offset mapping and correction system for laser dicing

Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.

Extreme ultraviolet mask blank defect reduction

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Singapore, Singapore

Sai Abhinand