Korea University Research and Business Foundation

Lg Display Co., Ltd.

Amotech Co., Ltd.

Sahn Nahm

Chiwan Kim

Taeheon Kim

Sung-Eui Shin

YongGyoon Jang

Yongwoo Lee

Jonghyun Kim

Ku-Tak Lee

Seok-June Chae

Chang Hak Choi

Byung Kyu Kim

Jun Hwan Jeong

Hwack Joo Lee

YongWoo Lee

Jong Hyun Kim

Yong-Su Ham

Yuseon Kho

Min Han Kim

Seunghyun Sung

Woong Hee Lee

Jung In Yang

Dae-Su Kim

Su-Hwan Go

Jae-Min Eum

Ho-Sung Shin

Sang Hyo Kweon

Compositions are disclosed that comprise a piezoelectric material according to Chemical Formula 1: (1−y)(NaK)(Nb,Sb)−ySrZrO+n mol % CuO, wherein 0.01≤y≤0.10, 0.4≤a≤0.6, 0≤x≤0.06, and 0.5≤n≤1.5. The compositions can further comprise a first material, and a second material surrounded by the first material. A piezoelectric device is also described, which includes a piezoelectric device layer including a composition of Chemical Formula 1, and having a first material layer and a second material layer surrounded by the first material layer; a first electrode part disposed on a first surface of the piezoelectric device layer; and a second electrode part disposed on a second surface facing the first surface.

Composition of piezoelectric material, method for fabricating the same, piezoelectric device, and display apparatus comprising piezoelectric device

A piezoelectric element comprising a compound represented by Formula 1, a piezoelectric device including the piezoelectric element, a vibration module including the piezoelectric device, and a display apparatus including the piezoelectric device are provided, where(1−)(LiNaK)(NbSb)OCaZrO  [Formula 1]

Piezoelectric element, piezoelectric device including the same, and vibration module and display apparatus including the piezoelectric device

A piezoelectric element comprising a compound represented by Formula 1, a piezoelectric device including the piezoelectric element, a vibration module including the piezoelectric device, and a display apparatus including the piezoelectric device are provided, where(1&#x2212;)(LiNaK)(NbSb)OCaZrO&#x2003;&#x2003;[Formula 1] where x, y, and z have a range of 0.001&#x2264;x&#x2264;0.2, a range of 0&#x2264;y&#x2264;0.5, and a range of 0&#x2264;z&#x2264;0.2, respectively.

A piezoelectric element comprising a compound represented by Formula 1, a piezoelectric device including the piezoelectric element, a vibration module including the piezoelectric device, and a display apparatus including the piezoelectric device are provided, where(1-)(LiNaK)(NbSb)OCaZrO&#x2003;&#x2003;[Formula 1]

Disclosed are a method of manufacturing a piezoelectric thin film and a piezoelectric sensor manufactured using the piezoelectric thin film. A piezoelectric sensor according to an embodiment of the present disclosure includes a substrate; a lower electrode formed on the substrate; a two-dimensional perovskite nanosheet seed layer formed on the lower electrode; a ceramic piezoelectric thin film formed on the two-dimensional perovskite nanosheet seed layer; and an upper electrode formed on the ceramic piezoelectric thin film, wherein each of the two-dimensional perovskite nanosheet seed layer and the ceramic piezoelectric thin film has a crystal structure.

Method of manufacturing piezoelectric thin film and piezoelectric sensor manufactured using piezoelectric thin film

The present invention discloses a dielectric ceramic composition having a formula represented by (1&minus;x)Nd(Ga Al )O -xCaTiO , wherein x refers a mole fraction of CaTiO to the composition and satisfies an expression of 0.5&lE;x&lE;0.8, and y refers a mole fraction of Al to Ga and satisfies an expression of 0&lE;y&lE;0.9. The present dielectric substance has a high dielectric constant and a high Q value and a resonant frequency temperature coefficient of near 0. Also, it can be sintered at a low temperature and thus replace the conventional dielectric materials used as a filter for parts of mobile communication or satellite communication appliances.

Dielectric ceramic compositions

The present invention discloses a method for preparing Ba(Zn Ta )O dielectric ceramic compositions. In accordance with the present invention, by adding a small amount of Al O , Ga O , ZrO , or TiO , which can generate metal ion having an atomic value of 3&plus; or 4&plus;, the problems occurring during the sintering of BZT due to the volatilization of Zn can be solved. Also, the BZT dielectrics obtained from the present method have a Q value of 200,000, which is higher than the pure BZT, a dielectric constant of 28.5 or more and a resonant frequency temperature coefficient of near 0.

Method for preparing dielectric ceramic compositions

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Seoul, South Korea

Sahn Nahm