Western Digital Technologies, Inc.

Sandisk Technologies Inc.

Other

Sahil Sharma

Rohit Sehgal

Phil Reusswig

Niles Yang

Nian Niles Yang

Philip David Reusswig

Grishma Shah

Piyush Dhotre

Daniel Edward Tuers

Hua-Ling Cynthia Hsu

YenLung Li

Min Peng

Piyush Anil Dhotre

Yehuda Hahn

Harish Reddy Singidi

Man Lung Mui

Mohan Dunga

Abhijeet Manohar

Gautam Ashok Dusija

Aaron Lee

Karin Inbar

Sarath Chandran Puthenthermadam

Mrinal Kochar

Pitamber Shukla

Nan Lu

Mikhail Palityka

Oleg Kragel

Vijay Sivasankaran

Gautham Reddy

Yong Huang

Mohsen Purahmad

Ivan Baran

Derek McAuley

A data storage device includes a non-volatile memory device having one or more memory dies and each of the memory dies include a plurality of input-output (I/O) lines. The data storage device further includes a controller. The controller is configured to receive an instruction to enter a low-power operating mode. Entering the low-power operating mode includes removing power from the one or more memory dies, providing an output signal toggling between a logic high and a logic low at a predetermined frequency to the plurality of I/O lines for a predetermined period of time, and operating in the low-power operating mode upon the expiration of the predetermined period of time.

Data storage device with enhanced power mode management

Embodiments described herein provide a linked XOR flash data protection scheme for data storage devices. In particular, the embodiments described herein provide a data storage controller with a memory space efficient XOR-based flash data protection/recovery algorithm with minimal flash block space overhead and support of recovery from full plane failure with neighbor planes disturb (NPD) in a single word line. Additionally, the embodiments described herein provide a reduced flash block space dedicated for XOR parity buffers storage by a factor of a number of planes per die without losing the capability to recover from NPD.

Linked XOR flash data protection scheme

For a non-volatile memory system with a multi-plane memory die having a large block size, to be able to more readily accommodate zone-based host data using zones that are of a smaller size that the block size on the memory, the memory system assigns data from different zones to different subsets of the planes of a common memory die. The memory system is configured to accumulate the data from the different zones into different write queues and then assemble the data from the different write zones into pages or partial pages of data that can be simultaneously programmed into memory cells connected to different word lines that are in different sub-blocks of different blocks in the corresponding assigned planes of the die.

Plane programming scheme for non-volatile memory with large block sizes

A data storage device including, in one implementation, a NAND memory and a controller. The NAND memory includes a read/write circuit configured to determine and store initial physical column addresses for each plane included in the NAND memory. The controller is configured to send a read-transfer command and a one-byte address to the NAND memory. The read/write circuit is also configured to retrieve a first initial physical column address from the initial physical column addresses stored in the NAND memory after the NAND memory receives the one-byte address from the controller. The first initial physical column address is associated with a die address and a plane address included in the one-byte address. The read/write circuit is further configured to retrieve a first set of data stored at the first initial physical column address. The read/write circuit is also configured to output the first set of data to the controller.

Overhead reduction in data transfer protocol for NAND memory

A method, apparatus, and system for level dependent error correction code protection in multi-level non-volatile memory. A write command to write data to a non-volatile memory array may be received. At least one multi-level page of multi-level storage cells may be determined for the write data. A coding rate for the write data of the at least one multi-level page may be determined based on an attribute of the at least one multi-level page. An ECC codeword may be generated that satisfies the coding rate and includes the write data. The ECC codeword may then be stored on the at least one multi-level page.

Level dependent error correction code protection in multi-level non-volatile memory

The present disclosure generally relates to efficient block usage after ungraceful shutdown (UGSD) events. After a UGSD event, a host device is alerted by the data storage device that a QLC block that was being used prior to the UGSD event is experiencing an ongoing block recovery and that the block is not yet available to accept new data. The block is then checked to determine whether the block can continue to be used for the programming that was occurring at the time of the UGSD event. Once a determination is made, the data storage device notifies the host device so that normal operations may continue. Additionally, the amount of free blocks available for programming is monitored during UGSD events so that the host device can be warned if a power loss halt is triggered.

Efficient data storage usage associated with ungraceful shutdown

A data storage system includes a storage medium and a storage controller configured to perform interface training operations. The interface training operations include loading a test data pattern into a first controller buffer of the storage controller, loading the test data pattern into a first storage medium buffer of the storage medium, setting a first read voltage or timing parameter at the storage controller, transferring the test data pattern from the first storage medium buffer to a second controller buffer of the storage controller using the first read voltage or timing parameter, comparing the test data pattern in the first controller buffer with the test data pattern in the second controller buffer, and determining a first read transfer error rate based on the first comparison.

Storage medium-assisted system interface training scheme

A method and apparatus for dynamically determining when, or how often, to do a read scan operation on a solid-state storage drive. One solution adjusts a read scan interval as part of performing a read scan operation. First, a bit error rate is determined for one of a plurality of storage blocks of a non-volatile memory array. Then, a cross temperature metric for the storage block is determined. A read scan interval is changed in response to the cross temperature metric satisfying a cross temperature threshold. Then, data in the storage block is relocated to a free storage block in response to the bit error rate satisfying a relocation threshold.

Variable read scan for solid-state storage device quality of service

Methods and apparatus for storing parity bits in an available over provisioning (OP) space to recover data lost from an entire memory block. For example, a data storage device may receive data from a host device, write the data to a block, and generate a corresponding block parity. The device may then determine a bit error rate (BER) of the block and an average programming duration to write the data written to the block, calculate a probability of the block becoming defective based on the BER and the average programming duration, and comparing the probability of the block to a set of probabilities respectively corresponding to a set of worst-performing blocks in a NVM. Thereafter, the device may write the block parity to an available over provisioning (OP) space in the NVM responsive to the probability of the block being greater than any probability in the set of probabilities.

Using over provisioning space for selectively storing block parity

A storage system and method for boundary wordline data retention handling are provided. In one embodiment, the storage system includes a memory having a single-level cell (SLC) block and a multi-level cell (MLC) block. The system determines if the boundary wordline in the MLC block has a data retention problem (e.g., by determining how long it has been since the boundary wordline was programmed). To address the data retention problem, the storage system can copy data from a wordline in the SLC block that corresponds to the boundary wordline in the MLC block to a wordline in another SLC block prior to de-committing the data in the SLC block. Alternatively, the storage system can reprogram the data in the boundary wordline using a double fine programing technique.

Storage system and method for boundary wordline data retention handling

A memory apparatus and method of operation is provided. The apparatus includes a plurality of memory cells coupled to a control circuit. The control circuit is configured to receive data indicating a data state for each memory cell of a set of memory cells of the plurality of memory cells and program, in multiple programming loops, the set of memory cells according to the data indicating the data state for each memory cell of the set of memory cells. The control circuit is further configured to determine that the programming of the set of memory cells is in a last programming loop of the multiple programming loops and in response to the determination, receive data indicating a data state for each memory cell of another set of memory cells of the plurality of memory cells.

Detection of a last programming loop for system performance gain

Systems and methods for storage systems using storage device monitoring for load balancing are described. Storage devices may be configured for data access through a common data stream, such as the storage devices in a storage node or server. Data operations from the common data stream may be distributed among the storage devices using a load balancing algorithm. Performance parameter values, such as grown bad blocks, program-erase cycles, and temperature, may be received for the storage devices and used to determine variance values for each storage device. Variance values demonstrating degrading storage devices may be used to reduce the load allocation of data operations to the degrading storage devices.

Storage device parameter monitoring for load balancing

A storage system comprises a controller connected to blocks of non-volatile memory cells. The memory cells can be operated as single level cell ('SLC') memory cells or multi-level cell ('MLC') memory cells. To increase write performance for a subset of memory cells being operated as SLC memory cells, the controller performs a deeper erase process and a weaker program process for the subset of memory cells. The weaker program process results in a programmed threshold voltage distribution that is lower than the &#x201c;nominal&#x201d; programmed threshold voltage distribution. Having a lower programmed threshold voltage distribution reduces the magnitude of the programming and sensing voltages needed and, therefore, shortens the time required to generate the programming and sensing voltages, and reduces power consumption.

Non-volatile storage system with fast SLC operation

A method of operating a storage device, including; performing, by a non-volatile memory, an erase operation on a block of memory in the non-volatile memory, where the non-volatile memory is coupled to a controller; receiving, by the non-volatile memory, a host-transaction within a first time period, where, the non-volatile memory is coupled to a host device; and suspending, by the non-volatile memory, an erase operation in response to receiving the host-transaction by: determining the erase operation has completed a charge phase; and suspending the erase operation during a pulse phase of the erase operation. The method additionally includes the non-volatile memory maintaining a loop counter and a pulse counter, where: the loop counter increments in response to completion of an erase loop, and the pulse counter increments in response to completion of an erase pulse, where the erase pulse is applied during a pulse phase of the erase operation.

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San Jose, CA, United States of America

Sahil Sharma