Sgs-thomson Microelectronics Limited

Safoin A Raad

Randy C Steele

Bruce A Doyle

An EEPROM cell suitable for use in programmable logic devices contains three transistors. A floating gate transistor is used to retain a programmed value using charge storage on the floating gate. A read transistor is connected between the floating gate transistor and an output signal line, and used to access the value stored in the floating gate transistor. A write transistor is connected to the floating gate transistor opposite the read transistor, and is used when programming the floating gate transistor. The write transistor and its associated control circuitry are fabricated to handle the higher programming voltages required by the floating gate device. The read transistor and associated drive circuitry are not required to handle the higher programming voltages, and can be fabricated using smaller, faster devices.

Three transistor EEPROM cell

A programmable logic device includes a programmable logic array and an output logic macrocell. The output logic macrocell includes a user configurable summing function that has a first logic gate connected to receive a first plurality of product terms, a second logic gate connected to receive a second plurality of product terms and a third logic gate connected to receive the combination of the first plurality of product terms and a controls signal, a fourth logic gate connected to receive the combination of the second plurality of Product Terms and the control signal and a logic circuit connected to receive the output signals from the first, second, third and fourth logic gates and to provide a first logical combination when the control signal is at a first logic state and a second logical combination when the controls signal is at a second logic state.

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Scottsdale, AZ, United States of America

Safoin A Raad