Lg Display Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Samsung Display Co., Ltd.

Yonsei University

Inu Research & Business Foundation

Saeroonter Oh

Dohyung Lee

Juheyuck Baeck

Jeyong Jeon

Seungmin Lee

Jun Hyung Lim

Joon Seok Park

Jongill Hong

Hyunsoo Shin

JungSun Beak

Sang Woo Sohn

Jonguk Bae

Young Joon Choi

Su Hyun Kim

Taeuk Park

Hoiyong Kwon

Kwanghwan Ji

Hye Lim Choi

Ji Hwan Lee

Kihwan Kim

Taehui Na

Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.

Spin logic device based on spin-charge conversion and spin logic array using the same

A spin logic device includes a first stage unit in which one side of the first magnetic layer is connected to an upper end of a first spin-charge conversion layer, a first dielectric layer is connected to a lower end of the other side of the first magnetic layer, a first conductive channel for receiving input current is connected to a lower end of the first dielectric layer, a first input portion formed of a conductor for receiving a first drive voltage is connected to an upper end of one side of the first magnetic layer, a second conductive channel for outputting first output current is connected to a lower end of the first spin-charge conversion layer, and a first conductor having a ground is connected to a lower end of the second conductive channel. A resistor for outputting steady current as the first output current may be connected between nodes on opposite ends of the second conductive channel.

Spin-charge conversion based spin logic device

A display device comprises a substrate; a driving transistor including a first active layer and a switching transistor including a second active layer, the first active layer and the second active layer being disposed on the substrate; a first gate insulating layer disposed on the first active layer of the driving transistor and the second active layer of the switching transistor; first and second gate electrodes disposed on the first gate insulating layer to overlap the first active layer of the driving transistor and the second active layer of the switching transistor, respectively; a first interlayer insulating layer disposed on the first gate electrode and the second gate electrode; and a second interlayer insulating layer disposed on the first interlayer insulating layer to overlap the first active layer without overlapping the second active layer in a plan view.

Method for manufacturing display device including second interlayer insulating layer overlapping active layer of driving transistor and not overlapping active layer of switching transistor

Display device including an interlayer insulating layer selectively overlapping an active layer of a driving transistor and method for manufacturing the same

An embodiment of the present invention provides a display device including a substrate and a transistor on the substrate. The transistor includes: a lower layer having conductivity and including a body portion and a plurality of protrusions; an oxide semiconductor layer including a channel region, a first conductive region disposed at a first side of the channel region, and a second conductive region disposed at a second side of the channel region, where the second side is opposite the first side; a gate electrode overlapping the channel region in a plan view; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The plurality of protrusions protrudes from the body portion, and the body portion overlaps the channel region in the plan view.

Display device

The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

Thin film transistor substrate having two different types of thin film transistors on the same substrate and display using the same

A thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

Thin-film transistor array substrate

a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

Thin film transistor substrate and display using the same

A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a base substrate, a first TFT having a polycrystalline semiconductor and disposed on the base substrate, and a second TFT having an oxide semiconductor and disposed on the first TFT. The second TFT overlaps at least a portion of the first TFT in a plan view.

Thin film transistor substrate and display device using the same

The present invention relates to a thin film transistor substrate having two different types of semiconductor materials on the same substrate, and a display using the same. A disclosed display may include a substrate, a first thin film transistor having a polycrystalline semiconductor material on the substrate and a second thin film transistor having an oxide semiconductor material on the substrate.

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Seoul, South Korea

Saeroonter Oh