Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Sae-Young Kim

Kyung-ho Lee

Yun-Ho Jang

Bum-Suk Kim

Yi-Tae Kim

Sang-Chul Sul

Kyung Ho Lee

Jung-Chak Ahn

Ji-Yong Park

Jung Chak Ahn

Sang-il Jung

Jong-Jin Lee

Tae-Seok Oh

Gwi-Deok Ryan Lee

Masaru Ishii

Hirosige Goto

Gwideokryan Lee

Myungwon Lee

Yi Tae Kim

Myung-won Lee

SangChul Sul

Hiroshige Goto

Youn-Seok Lee

Kang-Su Lee

Hyung-Keun Lim

Chan-Ho Chun

Yang-Gyu Kim

Getman Alexander

Yo-Han Sun

Sung-Jae Joo

Keun-Chan Yuk

Yun Ho Jang

An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Image sensor and computing system having the same

An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.

CMOS image sensor

An organic image sensor includes a first organic photoelectric conversion pixel circuit on an active region of a substrate and a second organic photoelectric conversion pixel circuit on an optical black region of the substrate. The first organic photoelectric conversion pixel circuit includes a first organic photoelectric conversion element configured to generate charges responding to incident light and a first readout circuit configured to receive a first input signal including the charges generated in the first organic photoelectric conversion element. The second organic photoelectric conversion pixel circuit includes a second organic photoelectric conversion element and a second readout circuit configured to receive a second input signal generated irrespective of the incident light.

Organic image sensor with optical black regions

A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.

Method of fabricating an image sensor having an annealing layer

A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag

An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.

Image sensor and method of stabilizing a black level in an image sensor

A refrigerator including a cooling chamber in a main body, includes: a rack assembly installed inside the cooling chamber; and a rack assembly drawing unit for drawing/putting the rack assembly out of/into the cooling chamber. Accordingly, food containers put on a rack of a rack assembly can be easily and conveniently taken out or checked regardless their locations by constructing the rack assembly to be selectively drawn out of a cooling chamber. Also, by attaching a vibration preventing rubber material to an end of the rack assembly, the food container put on the rack is prevented from being dropped, and the vibration noise can be effectively prevented.

Refrigerator

A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.

Solid-state image sensing device including anti-reflection structure including polysilicon and method of manufacturing the same

A method of manufacturing a microlens is provided. The method includes forming a first lens pattern, forming a second lens pattern on a portion of the first lens pattern in a manner which controls an asymmetric curvature of the microlens. The method further includes reflowing the first and second lens patterns.

Methods of manufacturing microlenses, microlens arrays and image sensors

An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.

Image sensor and method of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Sae-Young Kim