Hewlett-packard Development Company, L.P.

Hewlett-packard Company

Sadiq Bengali

Manish Giri

Victorio Chavarria

Chantelle Domingue

Ronald L Enck

Michael W Cumbie

Greg Scott Long

Michael G Monroe

Timothy R Emery

Galen P Cook

Robert K Messenger

Chien-Hua Chen

Naoto A Kawamura

James Elmer Abbott, Jr

George H Corrigan

Alfred I-Tsung Pan

Mohammed Saad Shaarawi

Eric Lee Nikkel

Brian M Taff

Jeremy Harlan Donaldson

Daniel A Kearl

Donald J Milligan

Martha A Truninger

Jeremy Sells

Roberto A Pugliese

Melinda M Valencia

Benjamin L Clark

Satya Prakash

Joshua M Yu

George Z Radominski

Stephen Horvath

Stephen Jalrus Potochnik

S Jonathan Wang

William J Edwards

Diane Lai

Norman L Johnson

James E Abbott

J Daniel Smith

Edward Enciso

Mickey Szepesi

James Weaver

John Chen

Terry V Nordstrom

Samuel Ajayi

Tom Cooney

Chantelle Elizabeth Domingue

Chantelle E Domingue

Jeffrey A Neilsen

Example sensor apparatus for microfluidic devices and related methods are disclosed. In examples disclosed herein, a method of fabricating a sensor apparatus for a microfluidic device includes etching a portion of an intermediate layer to form a sensor chamber in a substrate assembly, where the substrate assembly has a base layer and the intermediate layer, and where the base layer comprises a first material and the intermediate layer comprises a second material different than the first material. The method includes forming a first electrode and a second electrode in the sensor chamber. The method also includes forming a fluidic transport channel in fluid communication with the sensor chamber, where the fluidic transport channel comprises a third material different than the first material and the second material.

Substrate assembly and related methods

The present disclosure is drawn to an insulated sensor including a silicon substrate with active circuitry on a surface thereof, an electrode disposed on the silicon substrate, a passivation layer having a thickness from greater than 500 Angstroms to 3,000 Angstroms disposed on the active circuitry, and an electrode insulating layer having a thickness from 10 Angstroms to 500 Angstroms disposed on the electrode.

Insulated sensors

A microfluidic diagnostic chip may, in an example, include a number of microfluidic channels defined in a substrate each microfluidic channel fluidly coupled to at least one fluidic slot; the at least one fluidic slot to receive a number of fluids, and a number of gold sensors each gold sensor having a thickness of between 1500 and 5000 angstroms (&#x212b;).

Gold sensor

Example implementations relate to coagulation sensing. For example, a microfluidic chip for coagulation sensing may include a microfluidic channel, an outlet at an end of the microfluidic channel having an air interface, and an impedance sensor located within the microfluidic channel and within a particular proximity to the air interface, the impedance sensor to determine a stage of a coagulation cascade of a blood sample flowing through the microfluidic channel to the impedance sensor.

Microfluidic chip for coagulation sensing

A device includes a microfluidic channel structure on a substrate and a first resistive structure on the substrate to control the temperature of at least the substrate. The first resistive structure is separate from, and independent of the, microfluidic channel structure. In some instances, the device includes a second resistive structure.

Microfluidic temperature control

In an embodiment, a fluid ejection device includes a fluidic channel having first and second ends and a drop generator disposed within the channel. A fluid reservoir is in fluid communication with the first and second ends of the channel, and an alternating-current electro-osmotic (ACEO) pump is disposed within the channel to generate net fluid flow from the reservoir at the first end, through the channel, and back to the reservoir at the second end.

Fluid ejection device with ACEO pump

In one embodiment, a fluid ejection device includes a substrate with a fluid slot and a membrane adhered to the substrate that spans the fluid slot. A resistor is disposed on top of the membrane over the fluid slot, and a fluid feed hole next to the resistor extends through the membrane to the slot. A shelf extends from the edge of the resistor to the edge of the feed hole, and a passivation layer covers the resistor and part the shelf. An etch-resistant layer is formed partly on the shelf and in between the fluid feed hole and the resistor.

Fluid ejection assembly and related methods

A method for fabricating a fluid nozzle array includes forming a circuitry layer onto a substrate, the substrate comprising a stopping layer disposed between a membrane layer and a handle layer, forming a fluid feedhole extending from a surface of the membrane layer to the stopping layer, and forming a fluid supply trench extending from a surface of the handle layer to the stopping layer. A fluid nozzle array includes a substrate including a membrane layer, a stopping layer adjacent to the membrane layer, a handle layer adjacent to the stopping layer, and a set of fluid chambers disposed on a surface of the membrane layer above and along a width of a fluid supply trench extending from a surface of the handle layer to the stopping layer.

Fluid nozzle array

A fluid ejection device includes a thin film heater resistor portion having a heater resistor, and a two-layer structure disposed over the heater resistor. The two-layer structure includes a top layer and a bottom layer, with the top layer having a hardness that is at least 1.5 times greater than the hardness of the bottom layer.

Fluid ejection device

An inkjet printhead includes a substrate having an ink feed hole formed therethrough and a plurality of ink drop generators formed on the substrate. The drop generators define a stagger pattern, and the ink feed hole defines a sidewall that is shaped so as to match the stagger pattern. In one embodiment, a support membrane is embedded in the substrate along an edge of the ink feed hole.

Inkjet printhead

High-voltage CMOS devices and low-voltage CMOS devices are integrated on a common substrate by forming a sacrificial film over at least active device areas, lithographically defining device active regions of the high-voltage CMOS devices, implanting dopants selectively through the sacrificial film into the lithographically defined device active regions of the high-voltage CMOS devices, diffusing the implanted dopants, removing the sacrificial film, and subsequently forming low-voltage CMOS devices.

Integrating high-voltage CMOS devices with low-voltage CMOS

Various embodiments and methods relating to an ultra-violet radiation absorbing grid for attenuating transmission of near UV-light are disclosed.

Ultra-violet radiation absorbing grid

A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.

Ink-jet printhead fabrication

A method of fabricating a fluid ejection device comprises providing a barrier layer which defines fluidic spaces. The fluidic spaces defined by the barrier layer are filled with filler. A throughway is etched through the substrate. The filler is removed from the fluidic spaces after etching the throughway.

Method for fabricating a fluid ejection device

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Corvallis, OR, United States of America

Sadiq Bengali