Shin-etsu Handotai Co., Ltd.

Sadayuki Okuni

Tadahiro Kato

Keiichi Okabe

Hisashi Oshima

Hideo Kudo

Shunichi Ikeda

Hiroshi Tomioka

Izumi Fusegawa

Hisashi Masumura

Tomohiko Ohta

Nobuaki Mitamura

Nobuo Katuoka

The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at &#xb1;5&#xb0; C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of &#x3c;110&#x3e;.

Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer

In a double side simultaneous grinding machine, in which a plate-like workpiece is held and ground simultaneously on both a front surface and a back surface using a pair of grinding stones provided oppositely at both sides of the workpiece, a relative position between at least one of the center of thickness of the plate-like workpiece and the center of the holding means for holding the workpiece, and the center between stone surfaces of the pair of grinding stones is controlled during grinding. In a double side simultaneous grinding method, the generation of warpage of the plate-like workpiece is suppressed and degradation of warpage is prevented. Thereby, the plate-like workpiece can be processed to have high flatness on both sides. Further, the plate-like workpiece can be ground while a degree of warpage is controlled so that the workpiece is processed to have a warpage of a desired degree.

Double-sided simultaneous grinding method, double-sided simultaneous grinding machine, double-sided simultaneous lapping method, and double-sided simultaneous lapping machine

A method for producing a semiconductor wafer that yields a wafer having high flatness and back surface characteristics to address problems concerning the back surface of a wafer produced by the conventional surface grinding/double side polishing method and observed during the production process. The method comprises flattening both sides of the wafer by surface grinding means, eliminating a mechanically damaged layer by an etching treatment, and then subjecting a front surface of the wafer to a single side polishing treatment, wherein a back surface of the wafer has glossiness in a range of 20-80%.

Semiconductor wafer and production method therefor

The present invention has an object to provide a manufacturing process of a semiconductor wafer in which improvement on accuracy in a chamfering portion is realized. The manufacturing process of a semiconductor wafer comprises: a slicing step of obtaining a wafer in the shaped of a thin disk by slicing a single crystal ingot; a surface-grinding step of flattening a surface of the wafer; a chamfering step of chamfering the peripheral edge portions; and mirror-polishing step of mirror-polishing the surface of the wafer, wherein a simultaneous double-side surface-grinding step of grinding both sides of the wafer simultaneously by a double-side grinding machine is existent prior to the chamfering step in order to remove wafer waviness and a secondary grinding step is performed by grinding a single side or simultaneously both sides of the wafer after the chamfering step is carried out, so that improvement on accuracy in a chamfered portion is realized.

Manufacturing process for semiconductor wafer

The present invention provides a surface grinding method and apparatus for achieving a thin plate work such as a semiconductor wafer with high flatness, high accuracy and certainty and the apparatus comprises: a surface grinder in which a grinding wheel support member,by which a rotary shaft,of a grinding wheel,is supported is held by a pivotal shaft portion,and a grinding wheel shaft inclination control motor,which displaces the grinding wheel support member,by activating the pivotal shaft portion,is provided; a corrective angle storage device,which stores a corrective angle of an inclination angle of a rotary shaft,of the grinding wheel,to a rotary shaft,of a wafer,; and a shaft inclination control apparatus,which sends out a signal to control the grinding wheel shaft inclination control motor,while reading a corrective angle of the corrective angle storage device,, wherein a relative inclination angle of the grinding wheel to the thin plate work, in a more concrete manner an inclination angle of the rotary shaft,of the grinding wheel,, is changed for each of grinding steps of high rate feed, low rate feed and spark-out.

Surface grinding method and apparatus for thin plate work

A surface grinding method for a thin-plate workpiece is provided including the steps of (a) roughly surface grinding a first surface of a thin-plate workpiece using a thin-plate workpiece surface grinding device to create a reference plane having no sori or waviness; (b) inverting the thin-plate workpiece, the first surface of which has been roughly surface ground and, with a surface grinding device having a hard chucking plate, chucking the first surface to the hard chucking plate to roughly surface grind a second surface of the thin-plate workpiece; (c) chucking to the hard chucking plate the first surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to further finely surface grind the second surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the second surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to further finely surface grind the first surface of the thin-plate workpiece, wherein the surface grinding device comprising a surface grinding element; and a holding element for holding the thin-plate workpiece to be surface ground, wherein the holding element is a soft holding element. An alternate surface grinding method for a thin-plate workpiece is also provided in which steps (a) and (b) are the same as above and in which steps (c) and (d) are as follows: (c) chucking to the hard chucking plate the second surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to finely surface grind the first surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the first surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to finely surface grind the second surface of the thin-plate workpiece.

Surface grinding device and method of surface grinding a thin-plate

According to the invention, the flatness and quality can be improved while simplifying the process even when large size wafers of 200 to 300 mm or above are processed. Basic steps involved are a slicing step E for obtaining thin disc-shape wafers by slicing, a chamfering step F for chamfering the sliced wafers, a flattening step G for flattening the chamfered wafers, an alkali etching step H for removing process damage layers from the flattened wafers, and a double-side polishing step K of simultaneously polishing the two sides of the etched wafers. If necessary, a plasma etching step is used in lieu of the flattening and etching steps G and H respectively.

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Nishishirakawa-gun, Japan

Sadayuki Okuni