Kabushiki Kaisha Toyota Chuo Kenkyusho

Sadayuki Hayashi

Yoshiteru Omura

Kouji Tsukada

Takayuki Kato

Katsuhiko Hattori

Masaharu Takeuchi

Susumu Sugiyama

Yoshikatsu Kisanuki

Hidekazu Nishigaki

Kazuo Miki

Masayuki Matsui

Tetsuzo Inoue

Yasuo Asaga

Sanae Tokumitsu

Kazuyoshi Kawaguchi

Akio Kozato

A vehicle body structure of the present invention includes an elastic base frame formed in a ring shape; and three elastic upper frames each formed in a ring shape, the three upper frames being disposed on the base frame so as to configure a tetrahedron with the base frame, the three upper frames being connected to the base frame, and the upper frames that are adjacent to each other in a peripheral direction of the base frame being connected to each other. A vehicle body structure is hence provided capable of exhibiting high impact absorption properties.

Vehicle body structure

A collision discriminating apparatus for vehicles having a collision detection device mounted on a part of the vehicle to detect the deformed amount of a collided portion deformed by collision of a collision object against the vehicle, and a collision object presuming device for presuming what object collided against the vehicle on the basis of the deformed amount of the collided portion detected, and the vehicle speed when the vehicle collided.

Collision discriminating apparatus for vehicles

A semiconductor pressure transducer for detecting a pressure applied to a diaphragm. The pressure transducer comprises a diaphragm and a pressure detector including an Si single crystal which is so formed as to have a crystal face of {110 } as the surface to which a compression force is applied, and which is attached to the pressure detector such that the crystal face is parallel to the diaphragm, a first pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of &lt;001&gt; on the crystal face of {110 } and a second pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of &lt;110&gt; of the Si single crystal, either of the first or second pair of electrodes serving as output electrodes and the other pair serving as input electrodes and composite seat with one end thereof bonded to the crystal face of {110 } of the Si single crystal so as to transmit the pressure applied to the diaphragm perpendicularly to the crystal face of the Si single crystal as a compression force. The pressure applied to the diaphragm acts perpendicularly to the crystal face of the Si single crystal as a compression force and the output electrodes output a voltage corresponding to the compression force.

Semiconductor pressure transducer

A force transducer for detecting compression. The force transducer comprises an Si single crystal so formed as to have a crystal face of {110} as the surface to which compression is applied; a first pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of &lt;001&gt; of the Si single crystal and a second pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of &lt;110&gt; of the Si single crystal; a seat which is bonded to the crystal face of {110} of the Si single crystal and which transmits the compression substantially uniformly to the crystal face; and a base which is bonded to the surface of the Si single crystal opposite to the surface bonded with the seat and which supports the Si single crystal. The force transducer has a simple structure as a whole and is capable of detecting compression with accuracy.

Force transducer

Growing community of inventors

Toyota, Japan

Sadayuki Hayashi