Teijin Limited

Fts Corporation

Other

Kadokura, Sadao

Kamei, Kazuhiro

Watamura, Yoshihisa

Sadao Kadokura

Takashi Tomie

Masahiko Naoe

Kazuhiko Honjo

Kazuhiro Kamei

Kazuhiko Honjyo

Hisanao Anpuku

Junji Kido

Akira Yokoi

Takashi Kishida

Shoichi Murakami

Norihisa Yamaguchi

Yoshihisa Watamura

Yosio Matuura

Kiyoshi Imai

Akio Kushara

Akio Kusuhara

Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer. The box-shaped facing-targets sputtering apparatus includes a box-shaped facing-targets sputtering unit and a vacuum chamber, the sputtering unit including a rectangular parallelepiped frame having six faces, one of which serves as an opening face, and a pair of facing target units, each including a target and magnetic-field generation means formed of a permanent magnet which is provided so as to surround the target, which means generates a facing-mode magnetic field extending in a direction perpendicular to the surface of the target and a magnetron-mode magnetic field extending in a direction parallel to the target surface, in which the target units are provided on first opposing faces of the frame which are located adjacent to the opening face, and second opposing faces and the remaining one face of the frame are shutted, wherein the sputtering unit is provided on the vacuum chamber such that the opening face faces the vacuum chamber and a substrate on which a thin film is to be formed, the substrate being disposed in the vacuum chamber, which sputtering apparatus further includes, in a plasma confinement space, an auxiliary electrode which absorbs electrons, the plasma confinement space being provided in the interior of the sputtering unit.

Box-shaped facing-targets sputtering apparatus and method for producing compound thin film

Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.

Facing-targets-type sputtering apparatus and method

Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic field. The magnetic-field regulation means is formed of, for example, a permanent magnet, and is provided on the back side of each of the targets.

Facing-targets-type sputtering apparatus

Disclosed is a method for forming a thin-film layer, such as a metallic film or a transparent conductive film, on a functional organic layer formed from an organic compound, by means of a sputtering method performed at a low discharge voltage and a low gas pressure, without imparting any damage to the surface of the organic layer. The thin-film layer is formed by use of a facing-targets-type sputtering apparatus including a pair of facing targets disposed a predetermined distance away from each other; an electron reflection electrode disposed on the periphery of each target; and magnetic field generation means disposed at the sides of each target. The magnetic field generation means generates a magnetic field extending from one target to the other so as to surround a confinement space provided between the paired targets, as well as a magnetic field having a portion parallel to the surface of each target in the vicinity of a peripheral edge portion of the target. When an AC-DC power containing a DC component and a high-frequency component is supplied as a sputtering power to the apparatus, the thin-film layer can be formed at a lower discharge voltage and a lower gas pressure.

Method for producing organic thin-film device by use of facing-targets-type sputtering apparatus

A new structure of plasma generating unit and a compact configuration of the combination of plasma space and substrate holders for a facing target type sputtering apparatus which includes: an arrangement for defining box-type plasma units supplied therein with sputtering gas mounted on outside wall-plates of a closed vacuum vessel; at least a pair of targets arranged to be spaced apart from and face one another within the box-type plasma unit, with each of the targets having a sputtering surface thereof; a framework for holding five planes of the targets or a pair of facing targets and three plate-like members providing the box-type plasma unit so as to define a predetermined space apart from the pair of facing targets and the plate-like members, which framework is capable of being removably mounted on the outside walls of the vacuum vessel with vacuum seals; a holder for the target having conduits for a coolant; an electric power source for the targets to cause sputtering from the surfaces of the targets; permanent magnets arranged around each of the pair of targets for generating at least a perpendicular magnetic field extending in a direction perpendicular to the sputtering surfaces of the facing targets; devices for containing the permanent magnets with target holders, removably mounted on the framework; and a substrate holder at a position adjacent the outlet space of the sputtering plasma unit in the vacuum vessel. The unified configuration composed of a cooling device for cooling both the backside plane of the targets and a container of magnets in connection with the framework improves the compactness of sputtering apparatus.

Facing target type sputtering apparatus

A magnetic head assembly for a flexible magnetic disk drive unit has a magnetic recording and retrieving head for carrying out magnetic recording onto and retrieving from a metallic thin-film type flexible magnetic medium rotating about a center of the medium by coming into contact with the medium at a contact position, a first group of non-magnetic supporting pads arranged to support a plurality of positions of the flexible magnetic medium and disposed so as to surround the contact position, and a second group of non-magnetic suppressing pads in contact with a different plurality of positions of the flexible magnetic medium outward of the plurality of supporting positions so that the suppressing pads suppress any undulation of the flexible magnetic medium during rotation of the medium. The support pads and the magnetic recording and retrieving head may be formed with a recess, respectively, for trapping dust and other foreign materials, thereby preventing an accumulation of dust and other foreign materials between the head and the medium.

Magnetic head assembly for a flexible magnetic disk drive unit

A magnetic recording disk cartridge includes a casing having upper and lower halves mated together to define a planar spacing in which a magnetic recording disk supported by a hub member is rotatably held, and fluctuation suppressing ring members are disposed within the casing to be axially spaced from one another via at least an outer peripheral portion of the magnetic recording disk. The fluctuation suppressing ring members aerodynamically maintain the magnetic recording disk at an intermediate position in the planar spacing of the casing during the rotation of the magnetic recording disk.

Magnetic recording disk cartridge

A magnetic head assembly for a flexible magnetic disk drive unit has a magnetic recording and retrieving head for carrying out magnetic recording onto and retrieving from a metallic thin-film type flexible magnetic medium rotating about a center of the medium by coming into contact with the medium at a contact position, a first group of non-magnetic supporting pads arranged to support a plurality of positions of the flexible magnetic medium and disposed so as to surround the contact position, and a second group of non-magnetic suppressing pads in contact with a different plurality of positions of the flexible magnetic medium outward of the plurality of supporting positions so that the suppressing pads suppress any undulation of the flexible magnetic medium during rotation of the medium. The support pads and the magnetic recording and retrieving head may be formed with a recess, respectively, for trappng dust and other foreign materials, thereby preventing an accumulation of dust and other foreign materials between the head and the medium.

A magnetic recording medium conventionally utilizes the in-plane magnetization mode, but recently the perpendicular magnetization mode utilizing the perpendicular anisotropy of an hcp cobalt alloy layer, in which the C axis is oriented perpendicular to the layer surface, has been proposed. The known perpendicular magnetic recording medium is produced by means of RF sputtering and comprises a Permalloy layer, as layer of a low coercive-force material, between the nonmagnetic base and the hcp cobalt alloy layer. The perpendicular anisotropy attained by the present invention in very excellent and is superior to that of a perpendicular recording medium having no Permalloy layer because a Co-Ta alloy is used as the layer of a low coercive-force material.

Perpendicular magnetic recording medium, method for producing the same,

A method and apparatus for producing a thin film, such as a magnetic thin film and a metallic thin film on a substrate, such as plastic film, by the employment of a pair of opposed targets spaced apart from one another in a vacuum sputtering gas atmosphere, and magnetic field generating units for generating the perpendicular magnetic field extending perpendicularly to the surface of the targets for confining plasma in the space, and a reflecting electrode arranged adjacent to and in front of the magnetic field generating units and around the periphery of the targets for reflecting electrons toward the space between the opposed targets. The magnetic field generating units are arranged around the outer periphery of each of the opposed targets, and are capable of generating an auxiliary magnetic field for capturing the electrons. The combination of the reflecting of the electrons and the auxiliary magnetic field promotes a uniform erosion of the entire surfaces of the targets and enables a control of the thickness of the deposited film on a substrate having a large width.

Method of producing a thin film by sputtering and an opposed target type

A magnetic recording medium conventionally utilizes the in-plane magnetization mode, but recently the perpendicular magnetization mode utilizing the perpendicular anisotropy of an hcp cobalt alloy layer, in which the C axis is oriented perpendicular to the layer surface, has been proposed. The known perpendicular magnetic recording medium is produced by means of RF sputtering and comprises a Permalloy layer, as layer of a low coercive-force material, between the nonmagnetic base and the hcp cobalt alloy layer. The perpendicular anisotropy attained by the present invention is very excellent and is superior to that of a perpendicular recording medium having no Permalloy layer because a Co-Ta alloy is used as the layer of a low coercive-force material.

Perpendicular magnetic recording medium method for producing the same,

Magnetic recording medium conventionally utilizes the in-plane magnetization mode, but, recently, the perpendicular magnetization mode utilizing the perpendicular anisotropy of an hcp cobalt alloy layer, in which C axis is oriented normal to the layer surface, is proposed. The known perpendicular magnetic recording medium has been produced by an RF sputtering, but such medium is of too low flexibility to use it in the form of a magnetic tape. In addition, the production rate of the perpendicular magnetic recording medium by RF sputtering is very low. The perpendicular magnetic recording medium is very flexible due to particle pattern (FIGS. 10, 12 and 13) completely distinct from the conventional columnar pattern (FIGS. 8 and 11). In addition, the production rate is high, because the base (20) is located beside a space between the targets (T.sub.1, T.sub.2) of a sputtering device and further the magnetic field is generated perpendicularly to the sputtering surfaces (T.sub.1s, T.sub.2s) by a field coil (32) or magnets (32, 33). The present invention makes it possible to commercially produce the perpendicular magnetic recording medium, especially in the tape form.

Perpendicular magnetic recording medium

Magnetic recording medium conventionally utilizes the in-plane magnetization mode, but, recently, the perpendicular magnetization mode utilizing the perpendicular anistropy of an hcp cobalt alloy layer, in which C axis is oriented normal to the layer surface, is proposed. The known perpendicular magnetic recording medium has been produced by an RF sputtering, but such medium is of too low flexibility to use it in the form of a magnetic tape. In addition, the production rate of the perpendicular magnetic recording medium by RF sputtering is very low. The perpendicular magnetic recording medium is very flexible due to particle pattern (FIGS. 10, 12 and 13) completely distinct from the conventional columnar pattern (FIGS. 8 and 11). In addition, the production rate is high, because the base (20) is located beside a space between the targets (T.sub.1, T.sub.2) of a sputtering device and further the magnetic field is generated perpendicularly to the sputtering surfaces (T.sub.1s, T.sub.2s) by a field coil (31) or magnets (32, 33). The present invention makes it possible to commercially produce the perpendicular magnetic recording medium, especially in the tape form.

Method for producing a perpendicular magnetic recording medium

Disclosed is a process for forming an electrostatic latent image on a recording element having a dielectric layer superposed on a conductive electrode. In the first step of this process, the recording element and a xerographic sensitive element having a photoconductive layer also superposed on a conductive electrode are charged with the same polarity. In the second step, the photosensitive element is brought into virtual contact with the recording element so that the charged surface of the photoconductive layer in the photosensitive element is in face-to-face relationship with the charged surface of the dielectric layer in the recording element. In the third step, an external voltage is imposed between the two conductive electrodes, said voltage being of at least a magnitude for producing an electric field causing breakdown of minute air-gaps present between the contacted surfaces of the photosensitive element and the recording element and, before the completion of the external voltage imposition, an optical image is projected onto the photoconductive layer in the photosensitive element.

Growing community of inventors

Hachioji, Japan

Sadao Kadokura