Dainippon Screen Mfg. Co., Ltd.

Dainippon Screen Manufacturing Co., Ltd.

Sadao Hirae

Masanobu Sato

Shuichi Yasuda

Kenya Morinishi

Takamasa Sakai

Motohiro Kouno

Hiroaki Sugimoto

Takuya Kuroda

Seiichiro Okuda

Masayoshi Imai

Hideaki Matsubara

Ikuyoshi Nakatani

Hiroshi Okada

Tatsufumi Kusuda

Minobu Matsunaga

Motohiro Kono

Noriyuki Kondo

Seiichiro Sato

A substrate treatment method including the steps of: generating droplets of a treatment liquid by mixing the treatment liquid with a gas; and causing the treatment liquid droplets generated in the liquid droplet generating step to impinge on a surface of a substrate being treated. The treatment liquid droplets have a volume median diameter of 5 &#x3bc;m to 40 &#x3bc;m.

Substrate treatment method and substrate treatment apparatus

The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Substrate processing apparatus

The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

Substrate cleaning apparatus

A cleaning nozzle includes a mixing portion with inner walls thereof formed of quartz given smoothing treatment. As a result, the inner walls of the mixing portion have smooth surfaces. This construction effectively suppresses abrasion of the inner walls of the mixing portion, and particle generation from the cleaning nozzle. Further, the cleaning nozzle has a supply pipe surrounding a gas introduction pipe. This reduces areas of contact in the mixing portion between a gas and inner walls of the cleaning nozzle, to suppress particle generation with increased effect.

Cleaning nozzle and substrate cleaning apparatus

A gas mixture of dry steam and nitrogen gas serving as carrier gas is blown into a hot water mist injection port for rendering the nitrogen gas serve as a medium absorbing latent heat of condensation, thereby smoothly progressing condensation of water vapor and efficiently forming hot water mist. The water vapor is condensed in the hot water mist injection port formed by a cylindrical pipe for supplying latent heat of condensation to the nitrogen gas and dilating the same, thereby accelerating the flow of the hot water mist and spraying the hot water mist to a substrate from the hot water mist injection port at a high speed. Small droplets contained in the high-speed hot water mist have high kinetic energy and high thermal energy, for exhibiting a large colliding effect and a high activation effect with respect to small contaminants adhering to the substrate. A substrate cleaning apparatus capable of spraying hot water mist attaining a high cleaning effect to a substrate is provided.

The method obtains a first C-V curve prior to irradiation with light and a second C-V curve after the irradiation with light. The method determines the amount of the intra-film impurity ions in an insulating film in the state prior to the irradiation with light, based on the first and the second C-V curves.

Method of determining impurity content and apparatus for the same

A substrate washing apparatus includes a cooling system for cooling a substrate to below zero, a wet gas supplying system for supplying a gas containing atomized water to the surface of the substrate cooled by the cooling means to form ice on the surface of said substrate, and an ice removing unit for removing the ice formed on the surface of the substrate. This apparatus removes not only relatively large particles but also fine particles from the substrate.

Method of and apparatus for washing a substrate

Reflectance measurement with two monochromatic light beams having different wavelengths is used to obtain curves respective representing the relationship between an insulation film thickness of a semiconductor wafer and the gap between a test electrode and a semiconductor wafer surface. The C-V curve measurement at a fixed gap determines a total capacity of the gap and the insulation film, and a straight line representing the relationship between the gap and the insulation film thickness is obtained from the total capacity. An intersection where the two curves and the straight line cross gives the true values of the gap and the insulation film thickness. Other possible methods include: one for executing the C-V curve measurement and the reflectance measurement with two linear polarized light beams having identical wavelengths but different polarization directions; one for executing the reflectance measurement with three monochromatic light beams that differ in at least wavelength and/or polarization direction; and one for executing the reflectance measurement and the C-V curve measurement for two different gaps.

Method and apparatus for measuring insulation film thickness of

The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electrode pattern 200 formed on a bottom surface 66a of a cone glass 66. The bottom surface 66a has a reflecting plane 66c for reflecting a laser beam, a test electrode 201, and three parallelism adjustor electrodes 111 through 113 formed around the reflecting plane 66c. The bottom surface 66a also has a guard ring 120 disposed between the test electrode 201 and the parallelism adjustor electrodes 111 through 113. An insulating film 68 covers a lower surface of the cone glass 66. Wiring formed on a inclined face 66b of the cone glass 66 is connected to external lead wires at the upper end of the wiring. Since the cone glass 66 has two flat surfaces parallel to each other, the electrode pattern 200 is easily formed on the bottom surface 66a by photo lithography. The insulating film 68 effectively works to improve the dielectric breakdown strength.

Non-destructive measuring sensor for semiconductor wafer and method of

A stage 130 includes a metal base and an anti-metal contamination film formed on the metal base a semi-conductor wafer 120. The anti-metal contamination film is constructed of a material selected from the group consisting of a semi-conductor film, a semi-conductor oxide film, a semi-conductor nitride film, a semi-conductor carbide film, and a polytetrafluoroethylene film. The rear face of the semi-conductor wafer 120 mounted on the stage 130 is in direct contact with the anti-metal contamination film but not with the metal surface. The anti-metal contamination film, which does not contain simple substances of metals, effectively protects the rear face of the semi-conductor wafer 120 from contamination metal.

Apparatus and method for electrical measurement of semiconductor wafers

Amounts of electric charges in a semiconductor wafer are measured by using a non-destructive measuring device. First and second flat-band voltages before and after a specific charging process are measured with a non-destructive C-V measurement device. A gap between a test electrode and a surface of a semiconductor wafer is also measured before and after performing the charging process. The electric charge accumulated proximate the surface of the semiconductor wafer is determined according to measured values of the gap and the flat-band voltages before and after performing the charging process.

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Kyoto, Japan

Sadao Hirae