Fujitsu Corporation

Shinko Electric Industries Co., Ltd.

Fujitsu Microelectronics Limited

Fujitsu Semiconductor Limited

Mitsui Mining & Smelting Company, Ltd.

Sadahiro Kishii

Yoshihiro Arimoto

Ko Nakamura

Akiyoshi Hatada

Shigeo Satoh

Hiroshi Kudo

Masanori Terahara

Hiroshi Horie

Kaina Suzuki

Rintaro Suzuki

Junko Naganuma

Akio Rokugawa

Yoshihiro Nakata

Hirofumi Watatani

Yasushi Kobayashi

Masato Tanaka

Tsuyoshi Kanki

Ryo Tanabe

Kenzo Hanawa

Masaki Okuno

Hiroshi Morioka

Fumitoshi Sugimoto

Naruo Ueda

A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level.

Semiconductor device and its manufacture method

A method for producing abrasive agents includes: adding a silica to a manganese compound; heat-treating the manganese compound to which the silica has been added; forming abrasive grains by milling the manganese compound to which the silica has been added and which has been heat-treated; and adding a solvent to the abrasive grains.

Abrasive agent, method for producing abrasive agents, and electronic device

A semiconductor device formed by the steps of: forming a dummy electrodeand a dummy electrode; forming a metal filmon the dummy electrode; conducting a thermal treatment at a first temperature to substitute the dummy electrodewith an electrodeof a material containing the constituent material of the metal film; forming a metal filmon the dummy electrode; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrodeand the metal filmdoes not take place, to substitute the second dummy electrode with an electrodeof a material containing the constituent material of the metal film

Semiconductor device and method for fabricating the same

A trench is formed in a surface layer of a semiconductor substrate, the trench surrounding an active region. A lower insulating film made of insulating material is deposited over the semiconductor device, the lower insulating film filling a lower region of the trench and leaving an empty space in an upper region. An upper insulating film made of insulating material having therein a tensile stress is deposited on the lower insulating film, the upper insulating film filling the empty space left in the upper space. The upper insulating film and the lower insulating film deposited over the semiconductor substrate other than in the trench are removed.

Method of manufacturing semiconductor device having device characteristics improved by straining surface of active region

A trench is formed in the surface layer of a semiconductor substrate, surrounding an active region. A lower insulating film made of insulating material fills a lower region of the trench. An upper insulating film fills a region of the trench above the lower insulating film. The upper insulating film has therein a stress generating tensile strain in a surface layer of the active region.

Semiconductor device having device characteristics improved by straining surface of active region and its manufacture method

The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrodeand a dummy electrode; forming a metal filmon the dummy electrode; conducting a thermal treatment at a first temperature to substitute the dummy electrodewith an electrodeof a material containing the constituent material of the metal film; forming a metal filmon the dummy electrode; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrodeand the metal filmdoes not take place, to substitute the second dummy electrode with an electrodeof a material containing the constituent material of the metal film

An abrasive includes abrasive grains, a solvent, and an additive. MnO, MnO, MnO, MnO or a mixture thereof as the abrasive grains, HOas the solvent, and HNO, an organic acid, HO, etc., as the additive are employed. The abrasive is solidified with cooling, etc. The abrasive and the additive can be supplied to a polishing apparatus through separate routes.

Method of washing a polished object

A semiconductor device is disclosed that includes a semiconductor substrate, a device region disposed at a predetermined location of the semiconductor substrate, and a shallow trench isolation region that isolates the device region. The shallow trench isolation region includes a trench, a nitride film liner disposed at an upper portion of a side wall of the trench, and a thermal oxide film disposed at a lower portion of the side wall of the trench. The shallow trench isolation is arranged such that the width of a second portion of the shallow trench isolation region at which the thermal oxide film is disposed may be wider than the width of a first portion of the shallow trench isolation region at which the lower end of the nitride film liner is disposed.

Semiconductor device and method for manufacturing the same

A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

Slurry containing manganese oxide and a fabrication process of a

A method of fabricating a semiconductor device includes a step of polishing a surface of a substrate by a chemical mechanical polishing process conducted on a polishing cloth by a slurry. The polishing is conducted so that projections having a height of about 30 .mu.m or less are formed on the polishing cloth with an interval of about 55 .mu.m or less as a result of the polishing.

Polishing cloth for use in a CMP process and a surface treatment thereof

Slurry containing manganese oxide

Fabrication process of a semiconductor device using a slurry containing

For providing a method for polishing in which it is possible to polish a substance uniformly over a whole surface of a wafer without observing the polished surface of the wafer halfway through polishing, a wafer with current detective patterns formed of conductors directly contacted with a semiconductor substrate, and an insulating film covering the current detective patterns is held by a wafer holder with conductivity, and the insulating film is polished by a polisher in which a supporting plate with conductivity is exposed in openings through a polishing cloth while supplying a polishing slurry containing ions.

Growing community of inventors

Kawasaki, Japan

Sadahiro Kishii