Tohoku University

Sadahiko Miura

Tetsuo Endoh

Shoji Ikeda

Hideo Sato

Hiroaki Honjo

Hideo Ohno

Kenchi Ito

Masaaki Niwa

Koichi Nishioka

Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer () including Ta or the like is inserted beneath a hard mask layer ().

Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory

A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor &#x394; and a reduction in a writing current Iand which improves a performance index &#x394;/I(&#x3bc;A) obtained by dividing the thermal stability factor &#x394; by the writing current I. The magnetoresistance effect element includes a first reference layer (B), a first junction layer (), a first magnetic layer (), a first non-magnetic coupling layer (), a second magnetic layer (), and a second junction layer (), and a film thickness of the first non-magnetic coupling layer () is 0.1 nm or more and 0.3 nm or less.

Magnetoresistance effect element and magnetic memory

A method for producing a magnetic memory includes: forming a magnetic film having a non-magnetic layer between a first magnetic layer and a second magnetic layer on a substrate having an electrode layer; performing annealing treatment at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first or the second magnetic layer in vacuum; forming a magnetic tunnel junction element; forming a protective film protecting the magnetic tunnel junction element; a formation accompanied by thermal history, in which a constituent element of a magnetic memory is formed after the protective film formation on the substrate; and implementing annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate in an annealing treatment chamber, in vacuum or inert gas wherein no magnetic field is applied.

Method for producing magnetic memory comprising magnetic tunnel junction element

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Miyagi, Japan

Sadahiko Miura