Samsung Electronics Co., Ltd.

Sadaaki Masuoka

Myung Gil Kang

Woo Cheol Shin

Sung Man Whang

Sang Hoon Lee

Dong-won Kim

Keon-Yong Cheon

Yaoqi Dong

Sung-Man Lim

Sang Hoo Lee

A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.

Semiconductor device having a plurality of channel layers and method of manufacturing the same

Method of manufacturing semiconductor device having a plurality of channel layers

In a method of forming MOS transistor, a gate structure is formed on a substrate and a first spacer layer is formed on the substrate conformal to the gate structure. A second spacer layer is formed on the first spacer layer. A second spacer is formed on the first spacer layer corresponding to a sidewall of the gate structure by partially removing the second spacer layer from the first spacer layer. Impurities are implanted in the substrate by an ion implantation process using the gate structure including the first spacer layer and the second spacer as an ion implantation mask to form source/drain extension regions at surface portions of the substrate around the gate structure.

Method of manufacturing a semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Sadaaki Masuoka