Tosoh Corporation

Sagami Chemical Research Institute

Sachio Asano

Tomoyuki Kinoshita

Ken-ichi Tada

Noriaki Oshima

Kazuyoshi Arai

Daiji Hara

Yasushi Hara

Kohei Iwanaga

Yoshinori Harada

Satori Hirai

Ryoji Tanaka

Takahiro Kawabata

Ken-Ichi Tada

A compound useful for the manufacture of a Group 5 metal oxide film is provided. The compound is a Group 5 metal oxo-alkoxo complex represented by the following formula (A), and after preparing a film-forming material solution containing the compound and an organic solvent, a Group 5 metal oxide film can be manufactured using the film-forming material solution:M(&#x3bc;-O)(&#x3bc;-O)(&#x3bc;-O)(&#x3bc;-OR)(OR)(ROH)XY&#x2003;&#x2003;(A)(wherein M represents a niobium atom, etc.; Rrepresents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group, etc.; &#x3b1; represents an integer of 3 to 10; &#x3b2; represents 0 or 1; &#x3b3; represents an integer of 0 to 8; &#x3b4; represents an integer of 2 to 9; &#x2208; represents an integer of 0 to 6; &#x3b6; represents an integer of 6 to 16; &#x3b7; represents an integer of 0 to 4; &#x3b8; represents an integer of 0 to 2; and &#x3b9; represents an integer of 0 to 6).

Group 5 metal oxo-alkoxo complex, method for producing same, and method for manufacturing group 5 metal oxide film

An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Film-forming material, group IV metal oxide film and vinylenediamide complex

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Kanagawa, Japan

Sachio Asano