Jsr Corporation

Olympus Corporation

Sachiko Hashimoto

Yasuo Matsuki

Tatsuya Sakai

Takuya Ogura

Satoru Ono

Hideyuki Wada

Takahiro Yumoto

Hitoshi Kato

Hiroshi Shiho

Takeshi Urasaki

Koichi Niida

Isamu Yonekura

Masaki Kondo

Ryunosuke Matsushige

Aki Matsumoto

Tomomi Ouchi

An endoscope system includes an endoscope including at least one switch, each of which can be assigned two functions, and a controller. The controller sets a plurality of function pairs, each of which is composed of a combination of any one of a plurality of first functions and any one of a plurality of second functions, and assigns one function pair selected from the plurality of function pairs to the switch, measures a switch pressing time period after the switch is pressed, and executes the first function when the switch pressing is released before a predetermined first time period elapses after the switch is pressed and executes the second function when the switch pressing time period passes the first time period.

Endoscope system for assiging multiple functions to a switch, control method of endoscope system and storage medium

An endoscopic device generates an endoscopic image based on an image pickup signal generated by an image pickup device at a distal-end portion of an insertion portion, acquires channel information regarding a channel formed in the insertion portion, acquires angle information regarding a display angle of the endoscopic image, and generates and outputs a display image including a display endoscopic image generated based on modifying the endoscopic image based on the angle information, and a channel guide image generated based on the angle information and the channel information.

Endoscopic device, display image output method, computer-readable medium, and endoscopic system

A ruthenium compound from which high-quality film-like metal ruthenium can be obtained and a process for producing a metal ruthenium film from the ruthenium compound by chemical vapor deposition. The ruthenium compound as a material for chemical vapor deposition is represented by the following formula (1), for example 

Ruthenium compound and process for producing a metal ruthenium film

A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula:wherein R, Rand Rare each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, A high-quality ruthenium film even when it is very thin can be obtained.

Chemical vapor deposition material and chemical vapor deposition

A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.

Tantalum oxide film, use thereof, process for forming the same and composition

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Tokyo, Japan

Sachiko Hashimoto