Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Sachiko Fujisawa

Seiichi Suenaga

Maki Yonetsu

Takashi Sano

Takayuki Naba

A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Cu, Ti, and a first element being one or two selected from Sn and In, and the bonding layer includes a Ti-rich region in which a ratio (M/M) of a mass Mof Ti to a mass Mof the first element being 0.5 or more and a Ti-poor region in which the ratio (M/M) being 0.1 or less.

Bonded body, circuit board, semiconductor device, and method for manufacturing bonded body

A bonded body includes a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.

Bonded body including titanium alloy at bonding boundary

According to one embodiment, when a DSC curve is measured using a differential scanning calorimeter (DSC) for a brazing material for bonding a ceramic substrate and a metal plate, the brazing material has an endothermic peak within a range of not less than 550° C. and not more than 700° C. in a heating process. The brazing material favorably includes Ag, Cu, and Ti. The brazing material favorably has not less than two of the endothermic peaks within a range of not less than 550° C. and not more than 650° C. in the heating process.

Brazing material, bonded body, ceramic circuit board, and method for manufacturing bonded body

A bonded body includes a ceramic substrate and a copper plate, in which the copper plate is bonded to the ceramic substrate via a bonding layer, the copper plate includes a surface perpendicular to a direction in which the ceramic substrate and the copper plate are bonded, and a number percentage of copper crystal grains having major diameters greater than 400 μm in three 5 mm×5 mm regions included in the surface is not less than 0% and not more than 5%. The bonding temperature is favorably not more than 800° C. The number percentage of the copper crystal grains having major diameters greater than 400 μm is favorably not more than 1%.

Bonded body, ceramic copper circuit board, method for manufacturing bonded body, and method for manufacturing ceramic copper circuit board

A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.

Bonded body, ceramic copper circuit substrate, and semiconductor device

A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.

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Kawasaki, Japan

Sachiko Fujisawa