Fujitsu Corporation

Fujitsu Semiconductor Limited

Sachie Tone

Naoki Nishida

Hiroyuki Uno

Naoki Tanahashi

Hiroshi Ohta

Naoki Takahashi

Masahiro Ninomiya

A plurality of diffused resistors and a plurality of wirings (resistive elements) are alternately disposed along a virtual line, and those diffused resistors and wirings are connected in series by contact vias. In the same wiring layer as that of the wirings, a dummy pattern is formed so as to surround a formation region of the wirings and the diffused resistors. A space between the dummy pattern and the wirings is set in accordance with, for example, a minimum space between wirings in a chip formation portion.

Monitor pattern of semiconductor device and method of manufacturing semiconductor device

The semiconductor substrate comprises a first monitor partformed in a first region near a center of a semiconductor wafer, which includes a first element having a first electrodeformed over the semiconductor waferwith a first insulation filmformed therebetween, and a first electrode padelectrically connected to the first electrode; and a second monitor partformed in a second region different from the first region, which includes a second element having a second electrodeformed on the semiconductor waferwith a second insulation filmformed therebetween, and a second electrode padelectrically connected to the second electrode. When electric breakdown has taken place in both the first monitor partand the second monitor part, it can be judged that too large static electricity was generated upon the release of the surface protection film. When electric breakdown has taken place in either of the first monitor partand the second monitor part, the electric breakdown has taken place due to factors other than the static electricity generated upon the release of the surface protection film. When electric breakdown has taken place in neither of the first monitor partand the second monitor part, it can be judged that too large static electricity was generated upon the release of the surface protection film. Thus, factors for defects of semiconductor devices can be identified, which leads to improved quality of the semiconductor devices.

Semiconductor substrate and semiconductor device fabrication method

Growing community of inventors

Kawasaki, Japan

Sachie Tone