Basf Se Corporation

Basf Aktiengesellschaft

Wayne State University

Other

University of California

Sabine Weiguny

Charles H Winter

Sinja Verena Klenk

Jochem Henkelmann

Boris Breitscheidel

Norbert Niessner

Konrad Knoll

Hermann Gausepohl

Torsten Mattke

Klemens Massonne

David Dominique Schweinfurth

Lukas Mayr

Juergen Wortmann

Kerstin Schierle-Arndt

Thomas Ruhl

Andreas Henne

Michael Koch

Paul Naegele

Katharina Federsel

Jan Spielmann

Wolfgang Rohde

Armin Stamm

Frieder Borgmeier

Manfred Niessner

Thomas Preiss

Stephan Maurer

Matthias Rauls

Wolfgang Reif

Primoz Lorencak

Rudolf Erich Lorenz

Michael Lennartz

Hagen Wilmer

Eberhard Beckmann

Jürgen Wortmann

Nilanka Weerathunga Sirikkathuge

Kyle Blakeney

Tharindu Malawara Arachchige Nimanthaka Karunaratne

Feelly Ruether

Daniel Waldmann

Thomas R&uuml;hl

Rolf Lebk&uuml;cher

Torben Adermann

Helmuth Menig

Fabian Seeler

Matthias Hinrichs

Martin Gärtner

Thomas Michael Ryll

Uwe Diehlmann

Ahmad Dehestani

Jens Utecht

Stephan Zuend

Michael Zeilinger

Rolf Lebkücher

Robert Sengpiel

Thorsten Beierling

Jochen Henkelmann

Rafael Benjamin Berk

Alexander Georg Hufnagel

Tharindu Karunaratne

Daniel Löffler

Sabine Frischhut

Shizhao Su

Thomas Rühl

Behzad Tangeysh

Eric Wesley Mcfarland

Martin Gartner

Hendrik De Winne

Charles Hartger Winter

Paul Nägele

The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), or (III) in the gaseous state (I) (II) (III) wherein A is NR, NR, PR, PR, O, OR, S, or SR, E is N, NR, P, PR, O or S, n is 1, 2, or 3, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R' is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, and A, E, and n are chosen such that the compound of general formula (I), (II), or (III) is electronically neutral.

Process for the generation of metal- or semimetal-containing films

The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR, PR, OR, SR, CR, SiR, X is H, R' or NR′, wherein at least one X is H, n is 1 or 2, and R and R′ is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Process for the recovery of transition metal from spent lithium ion batteries containing nickel, wherein said process comprises the steps of (a) heating a lithium containing transition metal oxide material to a temperature in the range of from 400 to 1200° C., (b) treating said heat-treated material with water, (c) treating the solid residue from step (b) with an acid selected from sulfuric acid, hydrochloric acid, nitric acid, methanesulfonic acid, oxalic acid and citric acid, (d) adjusting the pH value to 2.5 to 8, (e) removing compounds of Al, Cu, Fe, Zn or combinations of at least two of the foregoing from the solution or slurry obtained in step (d).

Process for the recovery of lithium and transition metal using heat

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NRor OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,E is NR or O,n is 0, 1 or 2, m is 0, 1 or 2, andR' is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Process for the generation of metal-containing films

Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state 

The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: 

Aluminum precursor and process for the generation of metal-containing films

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NRor OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,E is NR or O,n isor, m isor, andR' is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

A heat transfer or storage medium containing a nitrate salt composition including at least one alkali metal nitrate and optionally alkaline earth metal nitrate; and, at least one alkali metal nitrite and optionally alkaline earth metal nitrite in an amount of 1.1 to 15.0 mol %. The molar amount of the alkali metal nitrite and optionally alkaline earth metal nitrite for a desired temperature is calculated by Xis the mole fraction of nitrite,K(T) is the temperature-dependent equilibrium constant of the reaction nitrate &#x21c4;nitrite+&#xbd; oxygen (NO&#x21c4; NO+&#xbd; O),pOis the oxygen partial pressure and T is the temperature of the nitrate salt composition.

Use of a nitrate salt composition as a heat transfer or heat storage medium for first operation of an apparatus containing these media

The present invention relates to a method for reducing or preventing the decomposition of a composition Z comprising Z1 a salt of dithionous acid in an amount ranging from 50 to 100 wt % and optionally Z2 an additive selected from the group consisting of alkali metal carbonate, alkaline earth metal carbonate, alkali metal or alkaline earth metal tripolyphosphate (NaPO), alkali metal or alkaline earth metal sulfite, disulfite or sulfate, dextrose and complexing agents in a combined amount ranging from 0.0001 to 40 wt %, which comprises contacting the components Z1 and optionally Z2 in the solid and/or dry or solvent-dissolved or -suspended state with at least one of the following compounds V in the solid and/or dry or solvent-dissolved or -suspended state, wherein the compounds V are selected from the group consisting of: (a) oxides of the alkali metals lithium, sodium, potassium, rubidium, cesium, or of magnesium, (b) sodium tetrahydroborate (NaBH), (c) anhydrous copper(II) sulfate (Cu(SO)), phosphorus pentoxide and (d) basic amino acids arginine, lysine, histidine, wherein the solvent for Z1, optionally Z2 and V is practically water-free.

Stabilization of sodium dithionite by means of various additives

A process comprising: (a) distilling a melt comprising crude alkanesulfonic acid to completely or partly remove low boilers, wherein the low boilers are drawn off at the top of a distillation column or of a one-stage evaporation apparatus and a material stream comprising alkanesulfonic acid, high boilers and residual low boilers is withdrawn at the bottom of the distillation column or of the one-stage evaporation apparatus, (b) sending the stream comprising alkanesulfonic acid, high boilers and residual low boilers into a melt crystallization as the starting melt to obtain crystals formed from the alkanesulfonic acid, hydrates of the alkanesulfonic acid or a mixture of both suspended in mother liquor, (c) performing a solid-liquid separation to remove the crystals from the mother liquor, and (d) optionally washing the crystals to remove mother liquor adhering to the crystals.

Process for purifying alkanesulfonic acids

The invention relates to a method of reprocessing alkanesulfonic acid employed in a chemical process as an agent, catalyst or solvent and comprising the steps of:

Method of reprocessing alkanesulfonic acid

Stabilized composition of O- and N-vinyl compounds and use of ammonium salts as stabilizers

A process for the reaction of an organic compound in the presence of a catalyst comprising, as active metal, ruthenium alone or together with at least one Group Ib, VIIb, or VIIIb metal in an amount of from 0.01 to 30 wt %, based on the total weight of the catalyst, applied to a support, wherein from 10 to 50% of the pore volume of the support comprises macropores having a pore diameter in the range of from 50 nm to 10,000 nm and from 50 to 90% of the pore volume of the support comprises mesopores having a pore diameter in the range of from 2 to 50 nm, the sum of said pore volumes being 100%, and said catalyst as such.

Process for reacting an organic compound in the presence of a supported ruthenium catalyst

A process for preparing addition polymers which contain carbamate units comprises reacting polyethyleneimines or addition polymers which contain vinylamine units of the formula

Method for producing polymers containing carbamate units and the use thereof

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Freinsheim, Germany

Sabine Weiguny