Heraeus Deutschland Gmbh & Co Kg

Heraeus Materials Technology Gmbh & Co. Kg

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Materion Advanced Materials Germany Gmbh

Sabine Schneider-Betz

Martin Schlott

Uwe Konietzka

Markus Schultheis

Bernd Szyszka

Jens Wagner

Volker Sittinger

Albert Kastner

Andreas Herzog

Christoph Stahr

Ben Kahle

Lars Ebel

Wilma Dewald

A sputtering target is provided which ensures the production of unvaryingly homogenous layers of the sputtering material during the lifespan of the sputtering target. The sputtering target includes a mixture of oxides of indium, zinc, and gallium, the mixture containing at least one ternary mixed oxide of indium, zinc, and gallium and at least one amorphous phase. The portion of ternary mixed oxides of indium, zinc, and gallium is at least 50 weight percent, relative to the total weight of the mixture, and the portion of amorphous phase is at least 20 weight percent, relative to the total weight of the mixture.

Sputtering target having amorphous and microcrystalline portions and method of producing same

Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 mas a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 &#x3bc;m, an oxygen content of less than 50 wt.-ppm, a content of the impurity elements, aluminum, lithium, sodium, calcium, magnesium, barium, and chromium, each of less than 0.5 wt.-ppm, and a metallic purity of at least 99.99% by weight.

Planar or tubular sputtering target and method for the production thereof

A TFT structure is provided in which an oxidic semiconductor is used in combination with an electrode material based on a Cu alloy.

Thin film transistor (TFT) having copper electrodes

Growing community of inventors

Dreieich, Germany

Sabine Schneider-Betz