Infineon Technologies Ag

Sabine Penka

Georg Seidemann

Gunther Mackh

Armin Fischer

Berthold Schuderer

Rainer Holmer

Dieter Kohlert

Erhard Sixt

Grit Schwalbe-Dietrich

Bernhard Duschinger

Josef Hermann

An embodiment of an integrated circuit comprises a plurality of cells. Each cell comprises a first supply node, a second supply node, a series connection with a first transistor, a second transistor and an electrical element. The series connection is coupled between the first and the second supply node. The electrical element includes a first and a second node. A third transistor is coupled between the first node of the electrical element and a first output node of the cell and a fourth transistor is coupled between the second node of the electrical element and the second output node of the cell. A control terminal of the first, the third and the fourth transistor is coupled to a first control node of the cell and a control terminal of the second transistor is coupled to a second control node of the cell.

Integrated circuit, method for acquiring data and measurement system

A method for producing a semiconductor product. Semiconductor product components are formed in a semiconductor product region of the substrate. A layer made of low-k material is subsequently formed on the substrate. Electrically conductive interconnects are formed in and/or on the layer made of low-k material. The layer of low-k material is provided in a wiring plane of the semiconductor product region for the electrical insulation of the interconnects from one another. A grid cap region of the substrate is subjected to a spacially delimited treatment such that the value of the dielectric constant is increased in the crossover region. Accordingly, an interconnect to interconnect capacitance is formed as grid cap capacitance from the interconnects arranged in the crossover region and the material and increased value of dielectric constant. Further, the dielectric constant of the low-k material remains unchanged in the semiconductor product region.

Method for producing a grid cap with a locally increased dielectric constant

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Unterhaching, Germany

Sabine Penka