California Institute of Technology

University of California

Sabah K Bux

Jean-Pierre Fleurial

Richard Barry Kaner

Vilupanur Alwar Ravi

Samad A Firdosy

Andrew Kindler

Kurt Star

James M Ma

Marc Rodriguez

The present invention provides a method of preparing a proppant material by heating a reaction mixture comprising a plurality of oxides in a reactive atmosphere to a temperature above the melting point of the reaction mixture to form a melt, and then allowing the melt to solidify in a mold in the form of spherical particles. The present invention also provides a method of preparing a proppant material by heating a reaction mixture comprising a plurality of oxides and one or more additives in a reactive atmosphere to a temperature below the melting point of the reaction mixture to form a powder including one or more reaction products, and then processing the powder to form spherical particles. The present invention also provides a proppant material including spherical particles characterized by a specific gravity of about 1.0 to 3.0 and a crush strength of at least about 10,000 psi.

Ultra-light ultra-strong proppants

The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material.

High performance high temperature thermoelectric composites with metallic inclusions

The present invention provides a method of preparing a nanocomposite thermoelectric material. The method includes heating a reaction mixture of a semiconductor material and a metal complex to a temperature greater than the decomposition temperature of the metal complex. The heating forms metallic inclusions having a size less than about 100 nm that are substantially evenly distributed throughout the semiconductor material forming the nanocomposite thermoelectric material. The present invention also provides a nanocomposite thermoelectric material prepared by this method.

Nanostructured silicide composites for thermoelectric applications

Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI) with the germanium based precursors.

Rapid solid-state metathesis routes to nanostructured silicon-germainum

The present invention provides a method of making a substantially phase pure compound including a cation and an anion. The compound is made by mixing in a ball-milling device a first amount of the anion with a first amount of the cation that is less than the stoichiometric amount of the cation, so that substantially all of the first amount of the cation is consumed. The compound is further made by mixing in a ball-milling device a second amount of the cation that is less than the stoichiometric amount of the cation with the mixture remaining in the device. The mixing is continued until substantially all of the second amount of the cation and any unreacted portion of anion X are consumed to afford the substantially phase pure compound.

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Chino Hills, CA, United States of America

Sabah K Bux