Samsung Electronics Co., Ltd.

Sa Yoon Kang

Yong Hwan Kwon

Dong Hyeon Jang

Nam Seog Kim

Min Young Son

Young Hee Song

Heung Kyu Kwon

Se Yong Oh

Min Kyo Cho

Yun Heub Song

Gu S Kim

Jin Hyuk Lee

Young Hoon Ro

Dong Whee Kwon

Young Shin Kwon

An image pickup device and a manufacturing method thereof. A digital signal processing (DSP) chip is attached on a first surface of a substrate. A CMOS image sensor (CIS) chip is attached on an active surface of the DSP chip. The DSP chip and the CIS chip may be electrically connected to the substrate by wire bonding. A housing kit having a lens configured to transmit an image to the DSP chip may be mounted on the substrate. An inner space between the housing kit and the substrate is not molded, thereby simplifying a manufacturing process and providing a thinner and/or lighter image pickup device.

Image pickup device with non-molded DSP chip and manufacturing method

A semiconductor chip with conductive wiring that is routed to the edge of the substrate from the chip's backside. A plurality of such semiconductor chips are stacked and electrically connected using a wiring element that is a circuit board or conductive adhesive strips. The wiring element connects the conductive wiring of each semiconductor chip along the sides of the chips to the package substrate. A method of manufacturing the semiconductor chip includes batch manufacturing a plurality of die on a wafer with an active surface on which a plurality bonding pads are formed, and a backside which is the rear side of the active surface; forming a circuit groove on the backside; applying conductive wiring on the circuit groove using a conductive material; and separating the wafer into a plurality of semiconductor chips. A method of manufacturing the chip stack package with a plurality of such semiconductor chips having bump pads and connection pads routed to the side surface of the semiconductor chip includes stacking and bonding the bonding pad of the upper semiconductor chip on the bump pad of a lower semiconductor chip; electrically connecting the bonding pad of the lowest semiconductor chip to the substrate by bump bonding electrically connecting the wiring element to the connection pad of the semiconductor chip and the substrate; and connecting an external connection to the substrate.

Semiconductor chip, chip stack package and manufacturing method

A stacked chip package includes a substrate having an upper surface and a lower surface, a first semiconductor chip having an upper surface and a lower surface, wherein the lower surface of the first semiconductor chip is attached to the upper surface of the substrate and the upper surface of the first semiconductor chip includes a plurality of first electrode pads, and a second semiconductor chip having an upper surface and a lower surface. The lower surface of the second semiconductor chip is attached to the upper surface of the first semiconductor chip, and the lower surface of the second semiconductor chip includes trenches that correspond to the locations of the first electrode pads on the upper surface of the first semiconductor chip.

Stacked chip package having upper chip provided with trenches and method of manufacturing the same

In accordance with the present invention, a chip scale package (CSP) is manufactured at wafer-level. The CSP includes a chip, a conductor layer for redistribution of the chip pads of the chip, one or two insulation layers and multiple bumps, which are interconnected to respective chip pads by the conductor layer and are the terminals of the CSP. In addition, in order to improve the reliability of the CSP, a reinforcing layer, an edge protection layer and a chip protection layer are provided. The reinforcing layer absorbs stress applied to the bumps when the CSP is mounted on a circuit board and used for an extended period, and extends the life of the bumps, and thus, the life of the CSP. The edge protection layer and the chip protection layer prevent external force from damaging the CSP. After forming all elements constituting the CSP on the semiconductor wafer, the semiconductor wafer is sawed to produce individual CSPs.

Chip scale packages manufactured at wafer level

A semiconductor chip has connection lines that are routed to the side surface from bump pads on the back surface of the chip. Such semiconductor chips are stacked on a circuit board to form a chip stack package while bumps are interposed between the bump pads of the lower chip and bonding pads of the upper chip. Further, an interconnecting member such as a conductive adhesive or a wiring board is applied to the side surfaces of the stacked chips such that the connection lines are connected to the interconnecting member. Therefore, the centrally disposed bonding pads of the chips are electrically connected to the circuit board through the bumps, the bump pad, the connection lines and the interconnecting member. The semiconductor chip may have heat dissipation part formed on the back surface. Methods of manufacturing the semiconductor chip and the chip stack package are also provided.

Devices that have bonding pads, and methods for fabricating the same. The bonding pads have two conductive layers, and an intermediate layer between them. The intermediate layer has a hybrid configuration of a relatively large conductive plate section, and a mixed plugs/mesh section. The plugs/mesh section has conductive portions interspersed with non-conducting portions, with features that are relatively small in size. The hybrid configuration achieves a proper balance between the plate section for the main electrical contact, and the plugs/mesh section for support and additional current density.

Semiconductor devices with bonding pads having intermetal dielectric layer of hybrid configuration and methods of fabricating the same

A wafer level chip package has a redistrubution substrate, at least one lower semiconductor chip stacked on the redisctribution substrate, and an uppermost semiconductor chip. The redistribution substrate has a redistribution layer and substrate pads connected to the redistribution layer. The lower semiconductor chip is stacked on the redistribution layer and may have through holes for partially exposing the redistribution layer, the through holes corresponding to the substrate pads, and having conductive filling material filling the through holes. The uppermost semiconductor chip may have the same elements as the lower semiconductor chip, and may be flip chip bonded to the through holes. The package may further have a filling layer for filling areas between chips, a metal lid for coating most of the external surfaces, and external connection terminals formed on and electrically connected to the exposed redistribution layer from the first dielectric layer of the redistribution substrate.

Wafer level stack chip package and method for manufacturing same

A semiconductor package manufacturing method includes: providing a rerouting film; attaching a semiconductor wafer having integrated circuits to the rerouting film, such that chip pads of the integrated circuits correspond to via holes of the rerouting film; forming a solder filling in each of the via holes to electrically connect the chip pads to the metal pattern layer; forming external terminals on terminal pads of the rerouting film; and separating the wafer and the rerouting film into individual semiconductor packages. A method further includes forming a protection layer on the solder filling. Instead of the semiconductor wafer, individual integrated circuit chips can be attached on the rerouting film. The semiconductor package includes: an integrated circuit having chip pads; a substrate attached to the integrated circuit so that via holes of the substrate are above the chip pads; solder fillings inside the via holes, the solder fillings electrically connecting the chips pads to the pattern metal layer; and another dielectric layer between the substrate and the semiconductor integrated circuit. The semiconductor package further includes external terminals, interconnection bumps on the chip pads, and polymer protection layers on the solder fillings.

Semiconductor package

A semiconductor package which includes: a semiconductor integrated circuit having chip pads formed thereon; interconnection bumps overlying on the chip pads; a patterned metal layer connecting to the interconnection bumps; a first dielectric layer under the patterned metal layer; a second dielectric layer overlying on the patterned metal layer; and terminal pads connecting to the patterned metal layer. The semiconductor package can further include external terminals connecting to the terminal pads, a third dielectric layer filling a gap between the first dielectric layer and the semiconductor integrated circuit.

Chip scale package

method for manufacturing a semiconductor package

A method for manufacturing a chip scale package includes: providing a redistribution substrate; attaching a semiconductor wafer to the redistribution substrate; forming external terminals on the redistribution substrate; and separating the semiconductor wafer and the redistribution substrate into individual integrated circuits. The method can further include forming a buffer layer by filling a gap between the semiconductor wafer and the redistribution substrate with a dielectric material. Another method is the same as the method described above except that instead of the semiconductor wafer, individual integrated circuit chips attach to the redistribution substrate. Meanwhile, a semiconductor package includes: a semiconductor integrated circuit having chip pads formed thereon; interconnection bumps overlying on the chip pads; a patterned metal layer connecting to the interconnetion bumps; a first dielectric layer under the patterned metal layer; a second dielectric layer overlying on the patterned metal layer; and terminal pads connecting to the patterned metal layer. The semiconductor package can further include external terminals connecting to the terminal pads, a third dielectric layer filling a gap between the first dielectric layer and the semiconductor integrated circuit.

Chip scale package and method for manufacturing the same using a redistribution substrate

In accordance with the present invention, a chip scale package (CSP) is manufactured at wafer-level. The CSP includes a chip, a conductor layer for redistribution of the chip pads of the chip, one or two insulation layers and multiple bumps, which are interconnected to respective chip pads by the conductor layer and are the terminals of the CSP. In addition, in order to improve the reliability of the CSP, a reinforcing layer, an edge protection layer and a chip protection layer is provided. The reinforcing layer absorbs stress applied to the bumps when the CSP are mounted on a circuit board and used for an extended period, and extends the life of the bumps, and thus, the life of the CSP. The edge protection layer and the chip protection layer prevent external force from damaging the CSP. After forming all elements constituting the CSP on the semiconductor wafer, the semiconductor wafer is sawed to produce individual CSPs.

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Seoul, South Korea

Sa Yoon Kang