Taiwan Semiconductor Manufacturing Comp. Ltd.

S K Yang

Yong-Shiuan Tsair

Po-Wei Liu

Wen-Tuo Huang

Hung-Ling Shih

Tsun-Kai Tsao

Shun-Shing Yang

A semiconductor device includes a non-volatile memory and a logic circuit. The non-volatile memory includes a stacked structure comprising a first insulating layer, a floating gate, a second insulating layer, a control gate and a third insulating layer stacked in this order from a substrate; an erase gate line; and a word line. The logic circuit includes a field effect transistor comprising a gate electrode. The word line includes a protrusion, and a height of the protrusion from the substrate is higher than a height of the erase gate line from the substrate. The word line and the gate electrode are formed of polysilicon.

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Hsinchu, Taiwan

S K Yang