Chang Gung University

S E Chow

Yung-Hsiang Lin

Chao-Sung Lai

Ray-Ming Lin

Hsien-Chin Chiu

Bing-Shan Hong

Chao-Wei Lin

Hsin-Shun Huang

An oxidized low density lipoprotein sensing device for a gallium nitride process is a GaN HEMT device including: a gateless AlGaN/GaN sensing transistor device, a testing window, a source, a drain, two metal connecting wires and a passivation layer. The gateless AlGaN/GaN sensing transistor device has an epitaxial wafer structure including a GaN layer and an aluminum gallium nitride layer. The testing window is disposed on the epitaxial wafer structure. The metal connecting wire is disposed on a source and a drain. The passivation layer is covered onto a surface of the sensing device except the testing window. A built-in piezoelectric field is created by the properties of FET and the polarization effect of AlGaN/GaN to achieve the effect of sensing the level of oxidizing proteins in human body quickly, accurately and easily.

Oxidized low density lipoprotein sensing device for gallium nitride process

Growing community of inventors

Taipei, Taiwan

S E Chow