Intel Corporation

Gigatera Ag

Rüdiger Paschotta

Ursula Keller

Ian A Young

Kurt J Weingarten

Lukas Krainer

Heiko Unold

Silke Schön

A surface emitting laser (SEL) with an integrated absorber. A lower mirror and an output coupler define a laser cavity of the SEL. A monolithic gain structure positioned in the laser cavity includes a gain region and an absorber, wherein a saturation fluence of the absorber is less than a saturation fluence of the gain region.

Surface emitting laser with an integrated absorber

A passively mode-locked solid-state laser is designed to emit a continuous-wave train () of electromagnetic-radiation pulses, the fundamental repetition rate of the emitted pulses exceeding 1 GHz, without Q-switching instabilities. The laser includes an optical resonator (), a solid-state laser gain element () placed inside the optical resonator (), a device () for exciting said laser gain element () to emit electromagnetic radiation having the effective wavelength, and a device () for passive mode locking including a saturable absorber. The laser gain element () is a laser material with a stimulated emission cross section exceeding 0.8&#xd7;10cmat the effective wavelength, and is made of Nd:vanadate. The saturable absorber () is preferably a semiconductor saturable absorber mirror (SESAM) device. Even higher repetition rates are achieved by operating the laser in the soliton regime. For use in fiber-optical telecommunication, the laser wavelength is preferably shifted to 1.5 &#x3bc;m by use of an optical parametric oscillator. The laser is simple, robust, compact, efficient, and low-cost. It generates a relatively large average power of 100 mW and higher, which is useful for a number of optical probing and detection applications, in a beam () that is substantially a fundamental spatial mode.

High-repetition-rate passively mode-locked solid-state laser

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Zurich, Switzerland

Rüdiger Paschotta