Centre National De La Recherche Scientifique

Ecole Polytechnique

Régis Vanderhaghen

Bernard Drevillon

Pere Roca I Cabarrocas

A transistor for active matrix display and a method for producing the transistor (). The transistor () includes a microcrystalline silicon film () and an insulator (). The crystalline fraction of the microcrystalline silicon film () is above 80%. According to the invention, the transistor () includes a plasma treated interface () located between the insulator () and the microcrystalline silicon film () so that the transistor () has a linear mobility equal or superior to 1.5 cm2V&#x2212;1s&#x2212;1, shows threshold voltage stability and wherein the microcrystalline silicon film () includes grains () whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.

Growing community of inventors

Palaiseau, France

Régis Vanderhaghen