Panasonic Corporation

Nuvoton Technology Corporation Japan

Panasonic Holdings Corporation

Ryutaro Yasuhara

Takumi Mikawa

Atsushi Himeno

Takeshi Takagi

Satoru Fujii

Koji Katayama

Takeki Ninomiya

Yukio Hayakawa

Koichi Kawashima

Hiroyuki Akinaga

Hisashi Shima

Kengo Nishio

Takehide Miyazaki

Yasuhisa Naitoh

In a non-volatile storage device, a first lower-layer metal wire, a lower plug, a variable resistance element, an upper plug, and a first upper-layer metal wire are formed in that order from below in a storage region, and a second lower-layer metal wire, a first via, a middle-layer metal wire, a second via, and a second upper-layer metal wire are formed in that order from below in a circuit region. The first and second lower-layer metal wires are formed in the same layer, and the first and second upper-layer metal wires are formed on the same layer. Relative to a substrate, the variable resistance element and the middle-layer metal wire have top faces at different heights, bottom faces at different heights, or both top faces and bottom faces at different heights.

Non-volatile storage device and method of manufacturing the same

A semiconductor device includes variable resistance elements on a semiconductor substrate. Each of the variable resistance elements includes a first electrode, a second electrode, and a variable resistance layer that is sandwiched between the first electrode and the second electrode and that stores a resistance value that is continuously variable. The variable resistance layer includes a filament whose shape differs according to a neural network weight, and stores, as an analog value, the resistance value that is variable.

Semiconductor device and method of driving the same

A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.

Variable resistance non-volatile memory element and variable resistance non-volatile memory device using the element

A non-volatile storage device includes: a first electrode; a second electrode; a variable resistance element including a variable resistance layer having a resistance value which changes according to a voltage pulse applied between the first and second electrodes; a voltage pulse application circuit which applies the voltage pulse between the first and second electrodes; and a control circuit which controls the voltage pulse application circuit. Upon receiving an external instruction, the control circuit: reads a current resistance state of the variable resistance element; and when the current resistance state is the high resistance state, causes the voltage pulse application circuit to apply a first additional voltage pulse having a first polarity between the electrodes; and when the current resistance state is the low resistance state, causes the voltage pulse application circuit to apply, between the electrodes, a second additional voltage pulse having a second polarity different from the first polarity.

Non-volatile storage device and driving method

A non-volatile memory element including a first electrode; a second electrode; and a variable resistance layer. The variable resistance layer including, when a first metal is M and a second metal is N: a third metal oxide layer NO; a second metal oxide layer NO; and a first metal oxide layer MOsuch that the third, second and first metal oxide layers are stacked in this order; wherein when an oxygen content atomic percentage of an oxide of the first metal M in a stoichiometric state is A, an oxygen content atomic percentage of an oxide of the second metal N in a stoichiometric state is B, an oxygen content atomic percentage of MOis C, an oxygen content atomic percentage of NOis D, and an oxygen content atomic percentage of NOis E, (D/B)&#x3c;(C/A), (E/B)&#x3c;(C/A) and y&#x3c;z are satisfied.

Non-volatile memory element and manufacturing method thereof

Growing community of inventors

Hyogo, Japan

Ryutaro Yasuhara