Ngk Insulators, Inc.

Other

Applied Materials, Inc.

Ryusuke Ushikoshi

Koichi Umemoto

Tomoyuki Fujii

Kazuhiro Nobori

Hideyoshi Tsuruta

Yusuke Niori

Masashi Ohno

Naohito Yamada

Atsushi Sakon

Takao Soma

Hiromichi Kobayashi

Yusuke Niiori

Mie Nagao

Christopher F Lane

David Wingto Cheung

Satoru Kawakami

Mark A Fodor

Shinji Yamaguchi

Tetsuya Kawajiri

Kazuaki Yamaguchi

Masahiro Murasato

Katsuhiko Iwabuchi

Toshihiko Honda

Ryo Kuwajima

Kenji Kawabata

A method for reducing particles from an electrostatic chuck, having the steps of: setting a wafer onto an attracting face of an electrostatic chuck, attracting the wafer onto the attracting face by applying a voltage to the electrostatic chuck, releasing stress due to a difference in heat expansion between the wafer and the electrostatic chuck by sliding the wafer relative to the attracting face before the wafer's temperature arrives at a saturated temperature, and increasing the wafer's temperature to a saturated temperature from its lower temperature than that of the attracting face.

Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor

The disclosed ceramics joint structure, in which a ceramics member having an oxidation resistance property and a metal member are joined via a joint layer, has a structure such that a part of the embedded member is exposed to a joint surface of the ceramics member, which is contacted with the joint layer to form a metal exposing portion, and the ceramics member and the metal exposing portion are joined via the joint layer to the metal member respectively. Moreover, the joint layer is mainly made of one or more metal selected from the group consisting of gold, platinum and palladium.

Ceramics joint structure and method of producing the same

In a plasma processing apparatus, a temperature control of a substrate to be processed is improved. A ceramic made support member having a substantially cylindrical shape is provided in a process chamber. An upper end of the support member is airtightly connected to a back surface of a placement table by solid state bonding. A lower end of the support member is airtightly connected to a bottom of the process chamber via a lower cooling jacket and O-rings. A cooling jacket made of a disc-like aluminum block is provided in an atmosphere chamber formed inside the support member. The cooling jacket is mounted to the back surface of the placement table via a heat conductive sheet member.

Plasma processing apparatus

A ceramic heater includes a ceramic substrate having a heating surface, and a resistance heating element buried inside the ceramic substrate, wherein at least a part of the resistance heating element is constituted by a conductive network member, and a ceramic material constituting the ceramic substrate is filled in meshes of the network member.

Ceramic heater

A plasma generating electrode device including a substrate,made of a dense ceramic, and an electrode,buried in said substrate,wherein said electrode,is isolated from a setting face of said substrate,and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer,is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode,is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.

Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof

An electrostatic chuck for attracting an object for treatment. The electrostatic chuck includes a substrate, an insulating dielectric layer and at least one electrode located between the substrate and the insulating dielectric layer. The object is attracted onto the electrode via the insulating dielectric layer. The insulating dielectric layer is between 0.5 mm and 5.0 mm thick, and utilizes a gas-introducing hole to form a gas-diffusing depression on the side of an attractive surface, allowing for more uniform heat conduction. The gas-diffusing depression is between 100 um and 5.0 mm deep. The distance between the bottom surface of the gas-diffusing depression and an electrode may range from 500 .mu.m to 5 mm.

Electrostatic chuck

A joined article is constituted by a first member made of aluminum nitride joined to each other through a joining layer, wherein a second member is made of a material selected from a ceramic material or a metal, and the joining layer involves a continuous phase made of a metal selected from the group consisting of copper, aluminum and nickel as a main component and 10% by weight of at least one active metal selected from the group consisting of magnesium, titanium, zirconium and hafnium relative to the joining layer.

Joined articles, corrosion-resistant joining materials and process for

A plasma generating electrode device including a substrate 31 made of a dense ceramic, and an electrode 55 buried in said substrate 31, wherein said electrode 55 is isolated from a setting face of said substrate 31, and plasma is generated over said substrate. It is preferable that the minimum thickness of an electromagnetic wave permeation layer 37 is not less than 0.1 mm, the average thickness of the electromagnetic wave permeation layer is not less than 0.5 mm, the electrode 55 is a planar electrode made of a metal bulk, and the electrode is a monolithic sinter free from a joint face. This structure can be applied to an electric dust collector, an electromagnetic shield device or an electrostatic chuck. These can be preferably installed inside a semiconductor production unit using a halogen-based corrosive gas. The electrode can be embedded in the dense substrate made of the joint-free, joint face-free monolithic sinter by hot press sintering a ceramic molding and the electrode made of the planar metal bulk under pressure applied in a thickness direction of the electrode.

Plasma-generating electrode device, an electrode-embedded article, and a

A joint structure having a metal member and a ceramic member having a housing hole for accommodating at least a part of the metal member therein, in which an electrically conductive joint layer is formed between a bottom face of the metal member and a bottom face of the housing hole, and a film having a given wettability by the electrically conductive joint layer is formed on at least a part of the side wall face of the metal member.

Joint structure of metal member and ceramic member and method of

A joined ceramic structure including a ceramic member and a metallic joining member joined to each other through a joining layer made of a brazing material wherein a metallic member is buried in the ceramic member in the state that a metal-exposed portion is formed through partial exposure of the metallic member from such a joining surface of the ceramic member as contacting said joining layer, and the ceramic member and the metal-exposed portion are also joined to the joining layer along the joining surface of the ceramic member.

Joined ceramic structures and a process for the production thereof

A ceramic member-electric power supply connector coupling structure includes a ceramic member with a hole and is provided with a metallic member therein so as to be partially exposed to the hole. An electric power supply connector and a tubular atmosphere-shielding member are provided in the hole. Further, a stress-mitigating, low heat expansion conductor is provided inside the atmosphere-shielding member and the power supply connector is partially positioned therein. The atmosphere-shielding member is gas-tightly joined to the power supply connector, and the expansion conductor and the tubular atmosphere-shielding member are joined to the metallic member. The coupling structure has high heat and corrosion resistance, high joining strength, and remains highly conductive even at high temperature conditions in an oxidative or corrosive environment.

Ceramic member-electric power supply connector coupling structure

An electrostatic chuck for attracting an object to be treated, includes a substrate, an insulating dielectric layer and at least one electrode provided between the substrate and the insulating dielectric layer, wherein the above object is to be attracted onto the electrode via the insulating dielectric layer and an average thickness of the insulating dielectric layer is not less than 0.5 mm and not more than 5.0 mm.

A ceramic susceptor with an embedded metal electrode. The metal electrode has multiple apertures, and the ceramic material is cross-linked through the apertures. An electrical connection to the electrode protects the electrode from the environment in the processing chamber. The ceramic may be aluminum nitride, and the metal electrode may be a mesh of molybdenum wires. To form the electrical connection, the susceptor may be heated until an eutectic forms between a conductive connector and the metal electrode. Alternately, a brazing material may be placed between the metal layer and a conductive connector.

Growing community of inventors

Tajimi, Japan

Ryusuke Ushikoshi