The Furukawa Electric Co., Ltd.

Chubu Electric Power Company, Inc.

Ryusuke Nakasaki

Tomonori Watanabe

Akihiko Kasukawa

Shigeo Nagaya

Satoshi Arakawa

Nariaki Ikeda

Naoji Kashima

Takeharu Yamaguchi

Nobumitsu Yamanaka

Akinobu Nakai

A method for manufacturing a superconducting wire material in which the superconducting current is not saturated even when a superconducting layer is made into a thick film, and a superconducting wire material. In the method a superconducting layer is formed on a metal substrate interposed by an intermediate layer, the method including heating the metal substrate up to the film-formation temperature of a superconducting film for forming the superconducting layer, forming a superconducting film having a film thickness of at least 10 nm and no more than 200 nm on the intermediate layer, and reducing the metal substrate temperature to a level below the film-formation temperature of the superconducting film, and the superconducting film-formation, including the heating, the film-formation, and the cooling, are performed a plurality of times.

Method for manufacturing superconducting wire, and superconducting wire

An EA-DFB module including a DFB laser diode and an EA modulator formed on an InP first-conductivity-type substrate has a mesa stripe, a current blocking structure formed on both side surfaces of the mesa strip and a second InP cladding layer formed on top of the mesa stripe and the current blocking structure. The current blocking structure includes a Fe-doped semi-insulating film, a first conductivity-type buried layer and a carrier-depleted layer. The carrier-depleted layer reduces the parasitic capacitance at the boundary between the first-conductivity-type buried layer and the second InP cladding layer.

Optical device having a carrier-depleted layer

Growing community of inventors

Tokyo, Japan

Ryusuke Nakasaki