Sumitomo Electric Industries, Limited

Nippon Telegraph and Telephone Public Corporation

University of Tsukuba

Sumitomo Electric Ind., Inc.

Ryusuke Nakai

Takeshi Hikata

Soichiro Okubo

Munetsugu Ueyama

Daisuke Tanioka

Masami Tatsumi

Hideki Kashihara

Toshihiro Kotani

Yoshiaki Hagi

Jun-ichi Fujita

Shin-ichi Sawada

Shintaro Miyazawa

Akihisa Kawasaki

Kenichiro Miyatake

Manabu Okui

Isao Ozawa

Kazuhiko Oida

Hajime Yamazaki

Toshihiko Takebe

Keigo Hoshikawa

A carbon nanostructure producing method includes a growth step in which a plurality of catalyst particles in close contact with each other are separated in a flow of a carbon-containing gas so as to grow carbon nanotubes between the plurality of catalyst particles, and an elongation step in which the carbon nanotube is elongated by a wind pressure of the carbon-containing gas with at least one of the catalyst particles being retained.

Carbon nanostructure producing method, carbon nanostructure and carbon nanostructure producing apparatus

A method for producing a carbon nanostructure according to an aspect of the present invention is a method in which a carbon nanostructure is produced between a base body and a separable body while the separable body is relatively moved away from the base body, the base body including a carburizable metal that is a principal constituent, the separable body including a carburizable metal that is a principal constituent, the separable body being joined to or in contact with the base body in a linear or strip-like shape. The method includes a carburizing gas feed step, an oxidizing gas feed step, a heating step in which the portion of the base body at which the base body and the separable body are joined to or in contact with each other is heated, and a separation step in which the separable body is relatively moved away from the base body.

Method for producing carbon nanostructure and apparatus for producing carbon nanostructure

A method for manufacturing a carbon nanostructure according to an embodiment of the present invention is a method for manufacturing a carbon nanostructure, the method including a preparation step of preparing a substrate containing a carburizable metal as a main component, and a carbon nanostructure growth step of supplying a carbon-containing gas while heating the substrate, in which the carbon nanostructure growth step includes gradually cleaving a heated portion of the substrate. The cleaving in the carbon nanostructure growth step is preferably performed by subjecting the substrate to shearing. The heating in the carbon nanostructure growth step is preferably performed by irradiating a cleaving portion of the substrate with a laser. The preparation step preferably includes forming, in the substrate, a notch for inducing cleavage. Preferably, the substrate in the carbon nanostructure growth step is not oxidized.

Method for manufacturing carbon nanostructure, and device for manufacturing carbon nanostructure

Provided are a system and a method for treating ballast water for a ship, the system including a rotary filtration apparatus including a filter that is cylindrically formed so as to surround an axis, that is rotatable around the axis, and that has a pleated shape that is folded in a cylinder radial direction; and an electric motor for rotating the filter. A distance between the cleaning nozzle and a recess of the filter is 120 mm or less. The system and the method are configured to perform a steady-state operation that satisfies the following conditions a to d:

Ballast water treatment system for ship

A filter disposed as a cylinder around an axis line, and provided to be rotatable around the axis line, a treated water nozzle for emitting treated water toward an outer circumferential surface of the filter, a case provided to surround the filter, and including an outer cylindrical portion having a nozzle opening of the treated water nozzle therein, a filtered water flow path for guiding filtered water that has been transmitted through the filter to outside of the case from within the cylinder of the filter, and a discharge flow path for discharging discharged water that was not filtered through the filter to the outside of the case are provided.

Device and method for treating ballast water for ship

A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2&times;10,cm,, a carbon concentration of 2.5 to 20.0&times;10,cm,, a boron concentration of 2.0 to 20.0&times;10,cm,, an impurity concentration other than carbon and boron of at most 1&times;10,cm,, an EL2 concentration of 5.0 to 10.0&times;10,cm,, resistivity of 1.0 to 5.0&times;10,&OHgr;&middot;cm and a mean residual strain measured by photoelastic analysis of at most 1.0&times;10,.

GaAs single crystal substrate and epitaxial wafer using the same

When compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation hillocks tend to arise on the films. Off-angle wafers have been adopted for substrates in order to suppress the occurrence of hillocks. The off-angle .THETA. from a (100) plane, however, is not the sole factor for determing wheather hillocks will be formed on the film. There is a concealed parameter which determines the generation of hillocks. What induces hillocks on the growing film are the defects on the substrate itself. No hillocks originate on portions of the film that correspond to the portions of the InP wafer without dislocations. The role of the off-angle .THETA. of the substrate is preventing the influence of the dislocations from transmitting to the films. A smaller density D of the defects on the substrate allows a smaller off-angle .THETA. for suppressing the hillocks from arising. A larger density D of the defects demands a larger off-angle for the substrate so as to prevents the hillocks from originating. An inequality .THETA..ltoreq.1.times.10.sup.-3 D.sup.1/2 allows calculation of the off-angle .THETA. for preventing hillocks. More precisely, the inequlity is expressed as .THETA..ltoreq.1.26.times.10.sup.-3 D.sup.1/2.

Epitaxy for growing compound semiconductors and an InP substrate for

Method of storing semiconductor substrate

An apparatus for pulling a single crystal by CZ method or LEC method is improved. To this end, the heater for heating the inside of the furnace is divided at least in the vicinity of the solid-liquid interface into at least two heaters. Using this apparatus, a single crystal with a decreased dislocation density can be obtained.

Process for pulling a single crystal

An IC wafer with a uniform distribution of impurities is obtained by a pretreatment comprising annealing a semiconductor substrate at a high temperature for a long period of time and then cooling rapidly before IC processing.

Method for the pretreatment of a substrate for ion implantation

Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.

Method of monitoring single crystal during growth

In the pulling of a single crystal from a melt by the Czochralski method the temperature of the melt and the crystal is controlled by a plurality of heaters surrounding the crucible in vertically disposed relation relative to each other. The lowermost heater is controlled by an automatic temperature controller in response to the temperature of the bottom of the crucible and the remaining heaters are controlled by the selectring a specific ratio for the power supply of each of the remaining heaters with respect to the power supply of the lowermost heater.

Growing community of inventors

Osaka, Japan

Ryusuke Nakai