Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Ryuma Hirano

Hideyuki Nakanishi

Toru Tsuruta

Yoshihiro Mori

Masatoshi Kitagawa

Takashi Hirao

Akio Yoshikawa

Yoshiaki Hachiya

Satoru Takahashi

Yoshitake Yasuno

Yuji Yamanishi

Seiki Yamaguchi

Yuji Ueno

Seiji Sogo

Shin'ichi Ijima

Yoshio Mito

An optoelectronic apparatus includes an optoelectronic device, a mounting portion, a frame member surrounding a periphery of the mounting portion, and an optical component. The optical component is placed on an optical component placement portion. The frame member includes a pair of first side walls and a pair of second side walls. Each of the pair of second side walls has a recessed portion and a protruded portion. The optical component is disposed between the protruded portions, and is fixed with an adhesive filled in the recessed portions.

Optical electronic apparatus and method for producing the same

The semiconductor device of the present invention includes: a semiconductor layer of a first conductivity type; source and drain regions of a second conductivity type, which are formed within the semiconductor layer; a channel region provided between the source and drain regions; and a gate electrode formed over the channel region. The device further includes: a buried region of the first conductivity type, at least part of the buried region being included in the drain region; and a heavily doped region of the second conductivity type. The heavily doped region is provided at least between a surface of the semiconductor layer and the buried region. The concentration of a dopant of the second conductivity type in the heavily doped region is higher than that of the dopant of the second conductivity type in the drain region.

Semiconductor device and method for fabricating the same

A lead frame includes a die pad including a die pad main portion having a large thickness and a die pad peripheral portion having an intermediate thickness smaller than that of the die pad main portion, provided on at least one side of the die pad main portion, at least one support lead connected to the die pad, and at least two first inner leads having a small thickness smaller than that of the die pad peripheral portion, arranged such that end portions thereof are opposed to the die pad peripheral portion. The thick die pad provides good heat release properties, and reducing the thickness of the leads allows fine pitched leads to be produced. Such a lead frame can be manufactured easily by press stamping after belt-shaped regions having different thickness are formed by rolling.

Lead frame which includes a die pad, a support lead, and inner leads

A heterostructure diode is produced by a plasma CVD process. A defect caused on a silicon single crystal substrate by plasma deposition during formation of an amorphous semiconductor film leads to a problem of increase in the dark current due to the defect level. This defect is compensated for by active hydrogen contained in the amorphous semiconductor film so as to reduce the dark current. This can be effected by an annealing process conducted after formation of the heterojunction diode. The RF power is set low in the beginning period of formation of the semiconductor film. A radiation detecting apparatus is provided in which a plurality of the heterostructure diodes are integrated on a common substrate.

Method of forming a heterostructure diode

Growing community of inventors

Kyoto, Japan

Ryuma Hirano