Hitachi-high-technologies Corporation

Hitachi, Ltd.

Hitachi Plant Technologies, Ltd.

Other

Ryujiro Udo

Motohiko Yoshigai

Masatsugu Arai

Masanori Kadotani

Naoyuki Tamura

Hiromi Kobayashi

Takeshi Tsukamoto

Masaaki Iwasa

Tetsuya Kuwano

Hideto Nogiwa

Yoshihisa Maeda

Tsunehiko Tsubone

Manabu Edamura

Takashi Fujii

Tooru Aramaki

A welding method for an impeller having a plurality of blades, a disc and an exterior body including a shroud welded to the plurality of blades, comprising the steps of:

Welding method and welding apparatus for an impeller

Blades are connected to the surface of a disk and slots are formed in the surface of a shroud, which is opposite from the other surface of the shroud where the blades are to be welded. The blades are arranged on the opposite surface from the slots and a laser beam is applied from the surface in which the slots are formed, to weld the shroud and the blades. Components are installed on the surfaces of the slots on the opposite side from the blades after the blades and the shroud in which the slots are formed are welded. Alternatively, the slots are filled with a material different from that of the shroud, such as a resin. With this configuration, distortion caused by welding heat can be reduced without degrading the fluid performance.

Welding slot sealing structure and welding method

A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.

Plasma processing method

A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.

Plasma processing method and plasma processing apparatus

A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.

Plasma processing apparatus

A semiconductor processing apparatus for processing a semiconductor in a processing chamber separated from the air wherein the processing chamber contains a wafer stage on which there is positioned a wafer sensor module equipped with sensor probes, each sensor probe capable of detecting at least one of electric current, voltage and temperature of an article to be processed and placed on the wafer sensor module, which is carried into the processing chamber by a transporting means for the article to be processed, and detected values by the sensor probes being converted to optical signals and led to outside of the processing chamber, can optimize conditions for processing the article easily and in a short time without lowering throughput.

Semiconductor processing apparatus and wafer sensor module

There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.

Growing community of inventors

Ushiku, Japan

Ryujiro Udo