Kabushiki Kaisha Toshiba

Ryujiro Saso

Takashi Nishimura

Mitsuhiko Kitagawa

Yoshiaki Aizawa

A field-effect transistor includes a silicon layer formed on an insulating film, a first-conductivity-type base and a second-conductivity-type source layers formed in the silicon layer being adjacent to each other, a second-conductivity-type drain layer formed in the silicon layer being separated from the source layer with the base layer being interposed therebetween, a gate-to-drain offset layer formed between the base and drain layers, having a resistance higher than that of the base layer, and a gate electrode formed on at least a surface of the base layer via a gate insulating film wherein the silicon layer in which the base layer is formed is a strained silicon layer.

Growing community of inventors

Tokyo, Japan

Ryujiro Saso