Japan Fine Ceramics Center

Hitachi High-tech Corporation

The Furukawa Electric Co., Ltd.

International Superconductivity Technology Center

International Superconductivity Technology Center, the Juridical Foundation

Ryuji Yoshida

Takeharu Kato

Tsunenori Nomaguchi

Shunichi Motomura

Tadahiro Kawasaki

Hiroyuki Fukushima

Yuh Shiohara

Yutaka Yamada

Akira Ibi

Masateru Yoshizumi

Akio Kinoshita

Tsukasa Hirayama

Seiki Miyata

Reiji Kuriki

As a device for correcting positive spherical aberration of an electromagnetic lens for a charged particle beam, a spherical aberration correction device combining a hole electrode and a ring electrode is known. In this spherical aberration correction device, when a voltage is applied between the hole electrode and the ring electrode, the focus of the charged particle beam device changes due to the convex lens effect generated in the hole electrode. Therefore, in a charged particle beam device including a charged particle beam source which generates a charged particle beam, a charged particle beam aperture having a ring shape, and a charged particle beam aperture power supply which applies a voltage to the charged particle beam aperture, the charged particle beam aperture power supply is configured to apply, to the charged particle beam aperture, a voltage having a polarity opposite to a polarity of charges of the charged particle beam.

Charged particle beam device

When using a charged particle beam aperture having a ring shape in a charged particle beam device, the charged particle beam with the highest current density immediately above the optical axis, among the charged particle beams is blocked, so that it is difficult to dispose the charged particle beam aperture at the optimal mounting position. Therefore, in addition to the ring-shaped charged particle beam aperture, a hole-shaped charged particle beam aperture is provided, and it is possible to switch between the case where the ring-shaped charged particle beam aperture is disposed on the optical axis of the charged particle beam and the case where the hole-shaped charged particle beam aperture is disposed on the optical axis of the charged particle beam.

Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.

Substrate for fabricating superconductive film, superconductive wires and manufacturing method thereof

Growing community of inventors

Nagoya, Japan

Ryuji Yoshida