Showa Denko K.k.

Hitachi-kokusai Electric Inc.

Nippon Steel Corporation

Sony Computer Entertainment Inc.

Kokusai Electric Corporation

Sony Corporation

National Institute of Advanced Industrial Science and Technology

Nippon Steel & Sumitomo Metal Corporation

Showa Denko Kabushiki Kaisha

Ryuji Yamamoto

Yoshiro Hirose

Toshio Morita

Satoshi Shimamoto

Takeshi Nakamura

Shigeru Ogawa

Yoshihiro Serizawa

Hironori Ueno

Kimihiko Nakatani

Hitoshi Inoue

Yuji Nagao

Masahiro Doki

Yasuhiro Nishiyama

Akio Ohba

Atsushi Sano

Shigeru Enomoto

Shuji Hiramatsu

Hiroshi Ashihara

Ryota Sasajima

Kazuhiro Harada

Shunsuke Kunieda

Yuusuke Yamada

Tatsuhiro Takahashi

Tyler Daniel

Koichiro Yonetake

Naofumi Ohashi

Tsukasa Kamakura

Takaaki Noda

Kiyohiko Maeda

Kazuyuki Okuda

Kenji Kameda

Chiaki Sotowa

Takashi Yahata

Nobuaki Ishii

Motoo Yumura

Yoshinobu Nakamura

Kazuhiro Yuasa

Akinori Sudoh

Katsuyuki Tsuji

Kotaro Yano

Yuji Urano

Yuta Hirano

Sadao Nakashima

Jie Wang

Iwao Nakamura

Akira Morohashi

Masami Miyamoto

Satoshi Ohshima

Tomoyoshi Higashi

Kazuo Muramaki

Yoshihisa Sakamoto

Masaharu Toki

Hisayoshi Matsunaga

Yutaka Akase

Tomoya Oda

Satoshi Miyake

Tsuyoshi Inose

Hidetaka Agario

Naotaka Tawara

Kouji Shutou

Naonori Kawamura

Kenichi Ogawa

There is provided a technique that includes: (A) supplying a modifying agent to a substrate including a first surface and a second surface to form an inhibitor layer on the first surface; and (B) supplying a film-forming agent to the substrate after forming the inhibitor layer on the first surface to form a film on the second surface, wherein a width of an inhibitor molecule constituting the inhibitor layer is defined as WI, a spacing of adsorption sites on the first surface is defined as DA, a width of a molecule X constituting a predetermined substance contained in the film-forming agent is defined as WP, wherein WP>DA−WI is satisfied when WI is smaller than DA, and wherein WP>DAx−WI is satisfied when WI is larger than DA, where x is a smallest integer that satisfies WI<DAx.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.

Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

There is provided a technique that includes: (a) loading a substrate into a process container; (b) heating the substrate by supplying a first gas, which is heated when passing through a first heater installed at a first gas supply line, to the substrate via a gas supplier; (c) supplying a second gas, which flows through a second gas supply line different from the first gas supply line, to the substrate mounted on a substrate mounting table in the process container, via the gas supplier; and (d) lowering a temperature of the gas supplier by supplying a third gas, which has a temperature lower than that of the first gas, to the gas supplier between (b) and (c).

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A lithium secondary battery, including: a hydrofluoric acid-containing electrolytic solution; an electrode; and a conductive assistant, in which the conductive assistant (1) contains a substance that is poorly soluble in the hydrofluoric acid-containing electrolytic solution, the substance including one or more kinds selected from transition metal compounds, and (2) contains a substance that is soluble in the hydrofluoric acid-containing electrolytic solution, the substance having a total metal mass of 0 mass % or more and 0.003 mass % or less with respect to a total mass of the electrode; and a conductive assistant, including: a substance that is poorly soluble in a hydrofluoric acid-containing electrolytic solution; and a substance that consumes hydrofluoric acid, the conductive assistant being substantially free, or including 1 mass % or less with respect to a total mass thereof, of a substance that is soluble in the hydrofluoric acid-containing electrolytic solution.

Lithium secondary battery and conductive assistant used in same

A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a first precursor having chemical bonds between the first elements to a substrate, supplying a second precursor having chemical bonds between the first element and carbon without having the chemical bonds between the first elements to the substrate, and supplying a first reactant containing the second element to the substrate.

Method of manufacturing semiconductor device including forming a film containing a first element, a second element and carbon, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.

Technique includes forming a film containing first element, second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing forming a first solid layer having thickness of more than one atomic layer and equal to or less than several atomic layers and containing chemical bonds of the first element and carbon by supplying a precursor having the chemical bonds to the substrate under a condition where the precursor is pyrolyzed and at least some of the chemical bonds contained in the precursor are maintained without being broken, and forming a second solid layer by plasma-exciting a reactant containing the second element and supplying the plasma-excited reactant to the substrate, or by plasma-exciting an inert gas and supplying the plasma-excited inert gas and a reactant containing the second element which is not plasma-excited to the substrate.

A technique includes loading a substrate into a process chamber, supporting the substrate by a mounting table having a heater therein in the process chamber, forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on, unloading the substrate on which the film is formed, and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on. The second position is closer to a ceiling portion in the process chamber than the first position.

A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part.

A cleaning method includes performing a first cleaning process of supplying a fluorine-based gas from a first nozzle heated to a first temperature and a nitrogen oxide-based gas from a second nozzle heated to a first temperature into a process chamber heated to the first temperature in order to remove on surfaces of members in the process chamber by a thermochemical reaction, changing in internal temperature of the process chamber to a second temperature higher than the first temperature, and performing a second cleaning process of supplying a fluorine-based gas from the first nozzle heated to the second temperature into the process chamber heated to the second temperature in order to remove substances remaining on the surfaces of the members in the process chamber after removing the deposits by the thermochemical reaction and to remove deposits deposited in the first nozzle by the thermochemical reaction.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).

Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium

Growing community of inventors

Tokyo, Japan

Ryuji Yamamoto