Nec Electronics Corporation

Ryuji Tomita

Takashi Ishigami

Makoto Sekine

Kazuyoshi Ueno

Manabu Iguchi

Tetsuya Kurokawa

Yosuke Sugiyama

In a semiconductor manufacturing method, a metal film is formed on a substrate and heat treated. The relationship between substrate warping and the heat treatment temperature during silicide formation is acquired (S). A silicide film is formed by forming a metal film on a substrate and heat treating, including substrate measurement during heat treatment (S). The relationship between substrate warping at heat treatment temperature is determined from the relationship between the warping of the substrate and the temperature for heat treatment and the temperature for heat treatment carried out on the substrate when the warping of the substrate is measured. The difference between found warping and the measured warping is calculated (S). Whether the difference exceeds a predetermined value is determined (S). If the difference exceeds a predetermined value, heat treatment conditions are adjusted (S), but they not adjusted if the difference is no greater than the predetermined value.

Method of manufacturing semiconductor device

A semiconductor device has a first guard ring surrounding a circuit region, a second ring disposed between the circuit region and the first guard ring, and first connections connecting the first guard ring and the second guard ring to each other. An area sandwiched between the first guard ring and the second guard ring is divided by the first connections into a plurality of subareas. Even if the first guard ring is partly defective, water enters from outside into only the subarea which is contiguous to the defective part of the first guard ring.

Semiconductor device with guard ring for preventing water from entering circuit region from outside

Growing community of inventors

Kanagawa, Japan

Ryuji Tomita