Hamamatsu-Photonics K.k.

Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Mirise Technologies Corporation

National University Corporation Tokai National Higher Education and Research System

Hamamatsu Photonics Kabushiki Kaisha

Ryuji Sugiura

Naoki Uchiyama

Takeshi Sakamoto

Kenshi Fukumitsu

Fumitsugu Fukuyo

Yuta Kondoh

Kazuhiro Atsumi

Daisuke Kawaguchi

Tetsuya Osajima

Chiaki Sasaoka

Masatake Nagaya

Shoichi Onda

Jun Kojima

Toshiki Yui

Keisuke Hara

Shosuke Nakabayashi

Tomomi Aratani

Fumitsgu Fukuyo

A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.

Manufacturing method of semiconductor device

A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

Laminated element manufacturing method

A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light.

A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.

To provide a laser processing method which is capable of enhancing the dividing performance according to a required quality. By irradiating an object to be processed with a laser light L having a pulse waveform in which its half width and its bottom width are equal to one another, a plurality of modified spots are formed along a line to cut inside the object, and a modified region is formed with the plurality of modified spots. Here, a laser light sourcecontrols a drive power sourceby a laser light source controller, to switch among a pulse waveform among first to third pulse waveforms according to a PE value of the laser light L. In the case of a low PE value, a first pulse waveform formed such that a peak value is located on its first half side and into a saw-blade shape is set as the pulse waveform, and in the case of a high PE value, a second pulse waveform formed such that a peak value is located on its latter half side and into a saw-blade shape is set as the pulse waveform.

Laser processing method

An object to be processedis irradiated with laser light L along a line to cutwhile locating a converging point within the object, so as to form a modified region. Thereafter, the irradiation with the laser light L is performed again along the line, so as to form a modified regionbetween a front faceand the first modified regionin the objectand generate a fracture Cb extending from the modified regionto the front face. Therefore, a deflecting force Foccurring when forming the modified regionin the objectcan be released and canceled out by the fracture Cb. As a result, the objectcan be inhibited from deflecting.

Laser machining method

A laser processing device () comprises a laser light source () for emitting a laser light (L) and a laser light source controller () for controlling the pulse width of the laser light (L) and irradiates an object to be processed () with the laser light (L) while locating a converging point (P) within the object (), so as to form a modified region along a line to cut () of the object () and generate a fracture extending in a thickness direction of the object () from the modified region as the modified region is formed. In the laser processing device (), the laser light source controller () changes the pulse width of the laser light (L) according to a data table in which the fracture length, the thickness of the object (), and the pulse width of the laser light (L) are associated with each other. That is, the pulse width is changed according to the fracture length generated from the modified region. Therefore, the laser processing device () can generate a fracture having a desirable length from the modified region.

Method and device for controlling interior fractures by controlling the laser pulse width

Multiphoton absorption is generated, so as to form a part which is intended to be cutdue to a molten processed regionwithin a silicon wafer, and then an adhesive sheetbonded to the silicon waferis expanded. This cuts the silicon waferalong the part which is intended to be cutwith a high precision into semiconductor chips. Here, opposing cut sectionsof neighboring semiconductor chipsare separated from each other from their close contact state, whereby a die-bonding resin layeris also cut along the part which is intended to be cut. Therefore, the silicon waferand die-bonding resin layercan be cut much more efficiently than in the case where the silicon waferand die-bonding resin layerare cut with a blade without cutting a base

Method of cutting semiconductor substrate

A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.

Semiconductor substrate cutting method

In the laser processing method, the cross-sectional form of laser light L at a converging point P is such that the maximum length in a direction perpendicular to a line to cutis shorter than the maximum length in a direction parallel to the line to cut. Therefore, when seen from the incident direction of the laser light L, a modified regionformed within a silicon waferhas such a shape that the maximum length in the direction perpendicular to the line to cutis shorter than the maximum length in the direction parallel to the line to cut. Forming the modified regionhaving such a shape within the objectcan restrain twist hackles from occurring on cut surfaces when cutting the objectfrom the modified regionacting as a cutting start point, thereby making it possible to improve the flatness of the cut surfaces.

Laser processing method for forming a modified region for cutting in an object

Method of cutting semiconductor substrate via modified region formation and subsequent sheet expansion

An object to be processed can be cut highly accurately along a line to cut. An object to be processedis irradiated with laser light while locating a converging point within a silicon wafer, and the converging point is relatively moved along a line to cut, so as to form modified regions M, Mpositioned within the objectalong the line to cut, and then a modified region Mpositioned between the modified regions M, Mwithin the object

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Hamamatsu, Japan

Ryuji Sugiura