Mitsubishi Gas Chemical Company, Inc.

Other

Tokyo Electron Limited

Mitsubishi Gas Chemical, Inc.

Ryuji Sotoaka

Tetsuo Aoyama

Hideto Gotoh

Fukusaburo Ishihara

Kojiro Abe

Takayuki Niuya

Yoshiya Kimura

Takuya Goto

Hiroshi Matsunaga

Hiroyuki Mori

Kazuyoshi Yaguchi

Tsuyoshi Matsui

Taketo Maruyama

Minoru Kakuda

Ryuji Hasemi

Hidetoshi Ikeda

Tetsuya Karita

Masayuki Kojima

Takuro Ishibashi

Fukusaburou Ishihara

Yoshikazu Ohira

Kazusato Hara

Takafumi Tokunaga

Kazuhisa Usuami

Emi Higashiizumi

Shunji Sasabe

Masumi Ogasawara

Yoshimi Torii

Kouzo Ishibashi

A silicon etching liquid characterized by anisotropically dissolving monocrystalline silicon therein by using an aqueous solution containing a quaternary ammonium hydroxide and an aminoguanidine salt and an etching method of silicon using the instant etching liquid are an etching liquid and an etching method enabling one to perform processing at a high etching rate in etching processing of silicon, particularly in etching processing of silicon in a manufacturing process of MEMS parts or semiconductor devices.

Silicon etching liquid and etching method

In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid. A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.

The present invention provides a method of oxidizing a substance in a liquid containing nitrous oxide (NO) and an oxidation apparatus therefor. In this method, oxidation of a substance is conducted by allowing a substance to be present in a solution containing nitrous oxide (NO) and irradiating the solution with light including a wavelength of at least 240 nm or less.

Method for oxidizing substance and oxidation apparatus therefor

The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Cleaning agent and cleaning method

The bleaching compositions of discolored teeth comprise titanium dioxide initiating photocatalyst action with light irradiation, chemical compounds generating hydrogen peroxide in an aqueous solution and thickening agents. Further the bleaching methods of discolored teeth comprising applying the bleaching composition onto the surface area of the teeth and then initiating photocatalyst action by irradiating the applied surfaces area with light. Therefore, the present invention shows remarkable bleaching results due to easy application of the compositions onto discolored teeth and keeping the original activity of the photocatalyst without its deterioration.

Tooth bleaching compositions and methods of bleaching discolored tooth

The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Cleaning method using an oxidizing agent, chelating agent and fluorine compound

A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D&prime;) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.

Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same

There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

Cleaning liquid for semiconductor devices

Growing community of inventors

Ibaraki, Japan

Ryuji Sotoaka