Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Hitachi Microcomputer System, Ltd.

Vsli Technology, Inc.

Ryuji Shibata

Shigeru Shimada

Yoshinobu Nakagome

Akio Hasebe

Masaharu Kubo

Hideyuki Matsumoto

Yasunori Narizuka

Yasuhiro Motoyama

Akira Yabushita

Masayoshi Okamoto

Shingo Yorisaki

Toshiyuki Majima

Atsushi Kurosawa

Yoshiaki Hasegawa

Akira Uchiyama

To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle.

Fabrication method of semiconductor integrated circuit device

In a semiconductor integrated circuit device and a method of designing the same, design information about circuit cells each having a desired function are described as objects according to selected purposes. The pieces of design information are registered in a cell library as cell information capable of forming any of substrate potential fixed cells and substrate potential variable cells. Further, a data sheet common to the substrate potential fixed cell and the substrate potential variable cell is offered to a user, so that the user is able to make a selection according to the user's purposes. The substrate potential fixed cells and the substrate potential variable cells are mixed together on a semiconductor chip so as to be properly used according to the functions or the like of circuit portions in which the cells are used.

Method of designing semiconductor integrated circuit device and semiconductor integrated circuit device

Semiconductor integrated circuit device

The semiconductor integrated circuit device incorporates a power supply circuit which forms an operation voltage that matches the operation speed of the internal circuit. Since the operation voltage is set in accordance with the operation speed required of the internal circuit, the internal circuit can be operated with a minimum required voltage even when there are process variations and temperature changes. In other words, a rational power supply is realized.

Semiconductor integrated circuit device having an internally produced

In a method of designing cells applicable to different first and second design automation systems, first and second cells circuit-designed by the first and second design automation systems, respectively, are demarcated into a logic function portion and an input/output portion. A plurality of sets of common lithography patterns for the logic function portions of the first and second cells are determined such that each common lithography pattern set is shared by those of the first and second cells which have same logic function in the first and second design automation systems. A first set of lithography patterns for the input/output portions of the first cells in the first design automation system and a second set of lithography patterns for the input/output portions of the second cells in the second design automation system are determined, respectively. The first and second sets of lithography patterns are, at their external ends, in an arrangement satisfying requirements of the first and second design automation systems, respectively. The logic function portion of one or more of the first cells in the first design automation system having the determined set of common lithography pattern is combined with the input/output portion of the second cells having the second set of lithography pattern in the second design automation system.

Method of designing cells applicable to different design automation

Growing community of inventors

Higashiyamato, Japan

Ryuji Shibata