Taiyo Yuden Co., Ltd.

Ryuji Murata

Nobuaki Matsuo

Yuki Matsubayashi

Ryuichi Sunagawa

Jin Mikata

Yutaka Aoki

A snow quality measuring apparatus according to one aspect of the present invention includes a plurality of reflectors, at least one transmitter, at least one receiver, and a measuring device. The plurality of reflectors are respectively arranged at a plurality of prescribed heights above the ground. The transmitter emits radio waves towards the plurality of reflectors, and the receiver receives the reflected waves of the radio waves from the plurality of reflectors. The measuring device measures snow quality of snow on the ground at the prescribed plurality of heights based on the respective reflected waves to from the plurality of reflectors as received by the receiver.

Snow quality measuring apparatus and snow quality measuring method

To provide a smaller-sized high frequency filter. In a high frequency filter according to an embodiment of the invention, two filter circuits each equipped with a first externally coupling capacitor having one end coupled to an input-output terminal, a wavelength shortening capacitor having one end coupled to other end of the externally coupling capacitor and having other end coupled to the ground potential, and a resonator having one end coupled to the other end of the externally coupling capacitor and the one end of the wavelength shortening capacitor, having other end coupled to the ground potential, and being formed of a distributed constant line. The two filter circuits are broadside-coupled to each other.

High frequency filter and high frequency module equipped with same

A module includes: a first duplexer including a common terminal coupled to a first terminal of a diplexer, the diplexer including an antenna terminal coupled to an antenna, the first terminal, and a second terminal; and a second duplexer including a common terminal coupled to the second terminal of the diplexer and having a passband different from a passband of the first duplexer, wherein a frequency at which a reactance component of an impedance is approximately zero and the impedance is less than a reference impedance is not located in a passband of the first duplexer, the impedance being an impedance when the second duplexer is viewed from a node at which the antenna terminal is divided into the first terminal and the second terminal in the diplexer.

Module with duplexers coupled to diplexer

A module includes: a diplexer that includes a first terminal, a second terminal, and a common terminal coupled to an antenna; a first switch that is coupled to the first terminal, includes first ports, and selects, from the first ports, and connects one port to the diplexer; a first duplexer that is coupled to at least one of the first ports; a second duplexer that is coupled to the second terminal and has a passband different from a passband of the first duplexer; and a first impedance portion that is coupled to another port of the first ports.

Module

A high-frequency circuit includes: first duplexers, each including a first transmit filter having a first transmit band, a first receive filter having a first receive band, and a first common terminal to which first ends of the first transmit filter and the first receive filter are commonly connected; a first switch that selects and connects one of the first common terminals to a first antenna; an LPF or BPF that is connected between the first antenna and the first switch, and passes a signal in the first transmit band and the first receive band; and a second duplexer including: a second transmit filter having a second transmit band, a second receive filter having a second receive band, and a second common terminal that is connected to a second antenna and to which first ends of the second transmit filter and the second receive filter are commonly connected.

High-frequency circuit and communication device

A high frequency module reduces the inhibition in magnetic flux generated in an inductor and stray capacitance while simultaneously attaining shorter height and smaller size. The high frequency module includes a passive circuit having an inductor and a capacitor. One component part of the passive circuit is mounted as an electronic part on the substrate, while the other component part f the passive circuit is formed within the substrate. A ground electrode is further provided between the one component part of the passive circuit and the other component part.

High frequency module

An integrated-circuit element and passive components are mounted on a front face of a multilayer substrate. A capacitor constituting a crystal-oscillator circuit is disposed inside the multilayer substrate. A cavity is provided in a rear face of the multilayer substrate. A crystal oscillator constituting the crystal-oscillator circuit is accommodated in the cavity, and the cavity is sealed with a sealing cap made of a conductive material. The sealing cap is fixed to an electrode pad provided on a motherboard with solder therebetween.

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Tokyo, Japan

Ryuji Murata