Fuji Photo Film Company, Limited

Fuji Photo Film, Inc.

Ryuji Kondo

Jin Murayama

Makoto Shizukuishi

Hiroshi Tamura

Hideki Kosaka

Takashi Yano

Takashi Miida

Hiroshi Tamayama

Tetsuo Yamada

Yoshimitsu Kudoh

Noboru Maruyama

Toshihiko Komatsu

Shinji Uya

Nozomu Ozaki

Masatoshi Tabei

Kazuyuki Masukane

Hideki Mutoh

Yuko Nomura

Gil Tisue

A solid state image pickup device having: a semiconductor substrate having a light receiving area; a number of pixels formed in the light receiving area of the semiconductor substrate in a matrix shape, each of the pixels having a main photosensitive field having a relatively large area and a subsidiary photosensitive field having a relatively small area; a main color filter array formed above the semiconductor substrate and covering at least the main photosensitive fields in register with the respective pixels; and a micro lens array formed on the color filter array and covering at least the main photosensitive fields in register with the respective pixels, wherein an image signal can be selectively picked up from either one of the main and subsidiary photosensitive fields. A solid state image pickup device having a high resolution can be provided.

Solid state image pickup device with two photosensitive fields per one pixel

A color shooting solid state image pickup apparatus is composed by using a solid state image pickup device having a number of color pixels disposed in a plurality of rows and columns in a pixel shift layout with distributing at least one color-type color pixels in a square lattice pattern aligned in row and column directions and by using a video signal proceeding unit being able to perform interpolation processes using color information obtained from pixel signals output from the solid state image pickup device excepting one piece of color information obtained from pixel signals of the color pixels distributed in a square lattice pattern. A moving image having a smooth motion can be reproduced on a monitor even if the process performance of the video signal proceeding unit is not improved so much.

State image pickup apparatus having pixel shift layout

A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.

Solid state imaging device with inner lens and manufacture thereof

A solid-state imaging device comprises: a semiconductor substrate which demarcates a two-dimensional surface; a multiplicity of photoelectric conversion units configured in a multiplicity of rows and columns on the surface of said semiconductor substrate; a light shielding film having openings formed above said semiconductor substrate, each of the openings is formed on each of said photoelectric conversion unit; a planarizing insulating film formed on said light shielding film; micro lenses formed on said planarizing insulating film, each micro lens is formed just above each of said opening; and a modifying film having one layer or a plurality of layers formed directly on said micro lenses and having a top surface with different curvature from that of a top surface of the micro lenses.

Solid-state imaging device having aspheric lenses

A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass. A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other. By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results. Further, a method of manufacturing the solid sate image pick-up device of the present invention is provided.

Solid state image pickup device and method of manufacturing the same

A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass. A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other. By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results. Further, a method of manufacturing the solid state image pick-up device of the present invention is provided.

Solid state image pickup device having particular package structure

A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass. A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other. By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results.

Solid state image pickup device

An electronic still camera in which every time a solid state pickup element is read out, immediately it is read out again in order to empty out residual charges.

Electronic still camera system

A solid state image-pickup device having an expanded dynamic range so that light reception from a subject having a high light intensity can be carried out without saturation of the light receiving elements of the image-pickup device.

Solid state image-pickup device with expanded dynamic range

A solid state image pickup element including: an MOS image sensor comprising: photoelectric conversion elements arranged in rows and columns; vertical selection lines extending along the rows; vertical signal lines extending along the columns; a vertical switching device associated with each photoelectric conversion element and controlled by an associated vertical selection line for selectively connecting an output of the associated photoelectric conversion element to an associated vertical signal line; a horizontal switching device associated with each column for selectively connecting an associated vertical signal line to an output line; a vertical shift register for controlling the vertical switching device through the vertical selection lines; and a horizontal shift register for controlling the horizontal switching device. The photoelectric conversion elements are divided into sets of m.times.n contiguous photoelectric conversion elements, and each set is divided into groups of photoelectric conversion elements. All of the photoelectric conversion elements in each group are associated with color filters having the same color; and the vertical switching devices associated with the photoelectric conversion elements in all but one of the groups selectively connect the outputs of all of the photoelectric conversion elements in a single group to one vertical signal line associated with the single group. The photoelectric conversion elements of the one group is connected to a number of vertical signal lines.

Color solid state image pickup element with plural photocells of a same

In a complementary insulated-gate field effect transistor including insulated-gate field effect transistors of p-channel and n-channel types, a portion of the insulating material layer to be used to form the n-channel transistor is formed to be thicker than a portion thereof to be used to form the p-channel transistor, and a portion of the electrode material layer to be used to constitute the p-channel transistor is formed to be longer along the channel than a portion thereof to be used to constitute the n-channel transistor. This prevents the threshold voltage in the n-channel and p-channel transistors from scattering widely. Alternatively, the ion peak concentration of the ions implanted in the semiconductor substrate and the insulating material layer is located in the proximity of the boundary between the insulating material layer and the semiconductor substrate in the portion to be used to constitute the n-channel transistor, and is located in the semiconductor substrate apart from the insulating material layer in the portion to be used to constitute the p-channel transistor. This also enables the threshold voltage in the n-channel and p-channel transistors to be precisely controlled in the manufacturing processes.

Complementary insulated-gate field effect transistor integrated circuit

A phase difference detector of the type capable of distinguishing a focused state by detecting relative positions of a pair of optical images obtained from an object, comprises sensor means adapted to photoelectrically convert the pair of optical images and to output a first analog electrical signal corresponding to one of the optical images and a second analog electrical signal corresponding to the other optical image, the signals being generated by the photoelectric conversion, at a predetermined period and in a non-destructive manner, and analog arithmetic means for subjecting the pair of analog electrical signals output from the sensor means to a correlative arithmetic operation.

Phase difference detector with analog signals

An solid state optical pickup device having integrally formed therein both a photosensitive matrix and peripheral circuits thereto. Both the photosensitive matrix and the peripheral circuit are built according to CMOS IC technology. A photoconductive film overlies the entire photosensitive matrix and is electrically connected to each of the charge accumulating regions in the matrix.

An image sensor having means for reducing fixed-pattern noise in its output signal. Real and dummy output lines are provided. First and second sets of transistors, driven by the horizontal shift register, couple, respectively, outputs of the sensor array and a floating line onto the real and dummy lines at read-out time. Because the fixed-pattern noise signal on the real and on the dummy lines is the same, the differential voltage between the two lines is entirely due to the actual signal. A flip-flop circuit is connected between the real and dummy lines to sense and amplify the differential voltage.

Image sensor having reduced fixed-noise output using flip flop circuit

A various CCD delay element in which extra delay stages are provided. The extra stages are either held at a given potential to pass all signals therethrough and thus to not contribute to the gain or are connected to the clock signals to thereby increase the delay.

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Kanagawa, Japan

Ryuji Kondo