Nec Corporation

Harada Industry Co., Ltd.

Koike Sanso Kogyo Co., Ltd.

Casio Computer Co., Ltd.

Yokogawa Electric Corporation

Sanyo Denki Co., Ltd.

Ryuji Kobayashi

Hitoshi Hotta

Masahiro Mogi

Kenichi Kobayashi

Satoru Akiyama

Jun Ishida

Osamu Nojima

Akira Furujo

Yutaka Imamura

Hideo Hayashi

Takeshi Sakano

Munenori Takakuwa

Honami Osawa

Atsuo Mochizuki

Akira Hurujo

Chiaki Kumamoto

Reiko Kokubu

Ryuusuke Morita

Wataru Kinoshita

Igor Golovlev

Yukio Ouchi

An antenna device includes an antenna base having a longitudinal direction, a first antenna element on the antenna base, and a pair of second antenna elements on the antenna base, the pair of second antenna elements being capable of transmitting and receiving radio waves in a higher frequency band than the first antenna element. In a planar view, when the antenna base is divided into four regions by a first line segment along the longitudinal direction and a second line segment orthogonal to the first line segment intersecting each other at the center point of the first antenna element, a region where one of the pair of second antenna elements is located is not adjacent to a region where the other of the pair of second antenna elements is located.

Antenna device

An information collection apparatus includes a receiving unit that receives an alarm indicating an abnormality related to a control station that is for a plant, and a collection unit that collects investigation information on a cause of the alarm from a part of the control station, where the part is identified based on the alarm received by the receiving unit.

Information collection apparatus, computer-readable recording medium, and information collection method

To appropriately determine whether or not a motion of a user is good in an electronic device that detects the motion of the user by a sensor installed on a lower back portion. An analysis system S includes a sensor unitand a processing device. The sensor unitis installed on a lower back portion of a user. The processing deviceincludes a swing evaluating section. The swing evaluating sectionextracts a first peak waveform and a second peak waveform in an output result of an angular speed measured by a sensor installed on the lower back portion of the user. The swing evaluating sectionevaluates the motion of the user on the basis of an extraction result.

Motion evaluation device using angular speed measured by a wearable sensor

A vehicle-body-embedded antenna device includes an antenna element, a circuit board, a coil and a ground bracket. The antenna element of a grounded type has an antenna capacitance adapted to function as a capacitive antenna that supports a first frequency band, and main polarization thereof is polarization substantially parallel to the roof surface. The coil is placed on the circuit board and connected to the power feeding part to which the antenna element is connected for making the antenna element to have an antenna length supporting a second frequency band. The ground bracket is directly grounded to a conductive member of the vehicle body which is provided at an angle different from an angle of the roof surface for improving polarization sensitivity of the antenna element substantially perpendicular to the roof surface.

Vehicle-body-embedded antenna device

The present invention is a plasma cutting apparatus (A) configured such that a starting gas is switched to plasma gas at the stage when current is applied to an electrode provided to a plasma torch, and a plasma arc is produced at a preset current value on a material (B) to be cut, so as to extend the life of the electrode, wherein the apparatus is configured to have: a starting gas supply unit () having a starting gas solenoid valve () provided with a starting gas supply source () and a starting gas pipeline (); a plasma gas supply unit () having a plasma gas solenoid valve () provided with a plasma gas supply source () and a plasma gas pipeline (); a plasma gas connection part () for connecting the downstream-side end part of the starting gas supply unit and the downstream-side end part of the plasma gas supply unit; a gas pipeline part () for connecting the plasma gas connection part () and a torch body (); a flow retention member () provided to the gas pipeline part; and a control device () for controlling the opening and closing of the solenoid valves, and controlling the flow retention member.

Plasma cutting apparatus

Inner nozzle for plasma torch

A semiconductor laser manufactured by selective MOVPE growth, in which the lattice relaxation of recombination layers grown on large width portions is suppressed, the leak current is suppressed, and the reliability is high. When a semiconductor layer is manufactured by selective MOVPE growth, a DH mesastripe () is epitaxially grown on a small width portion () which is a spacing of a silicon oxide mask (). The average strain of the DH mesa stripe () is shifted to the compression strain side to an extent that lattice relaxation is not caused. As a result, the tensile strains of recombination layers () grown on large width portions () are mitigated.

Semiconductor laser and method of manufacturing the same

A rotary electric machine such as a fan motor or the like capable of coupling a bearing holder and an insulator to each other without deteriorating accuracy of a diameter of an inner peripheral surface of the bearing holder on which bearings are held. The bearing holder and insulator are coupled to each other by a coupling structure, which is constituted by at least one recess formed on a forward end of the bearing holder and at least one projection provided on the insulator and tightly fitted in the recess. The projection and recess thus fitted together are concurrently heated at a peripheral portion thereof for deformation, resulting in being coupled to each other.

Rotary electric machine

Disclosed herein is a selective metalorganic vapor phase growth method of a group III-V compound semiconductor containing at least Al and In, in which a ratio of an HCl gas supply amount to a supply amount of a group III metalorganic material (�HCl supply amount!/�group III supply amount!) is set in a range of 0.01-0.3. Hence, a polycrystal density is decreased to ensure a selectivity, and a grown crystal composition can be controlled so as not to be excessive in the Al composition so that composition control can be done easily.

Selective crystal growth method of compound semiconductor

A semiconductor laser having improved reliability. The laser contains an AlGaInP first cladding layer of a first conductivity type, an AlGaInP second cladding layer of a second conductivity type that forms a mesa stripe, an active layer made of an undoped GaInP layer, an undoped AlGaInP layer, or a quantum well layer of an undoped GaInP sublayer and an undoped AlGaInP sublayer. The laser further contains a burying layer made of an Al.sub.x In.sub.1-x P or (Al.sub.y Ga.sub.1-y).sub.x In.sub.1-x P layer, which is placed at both sides of the mesa stripe to bury the stripe. The burying layer is larger in energy band gap than the active layer and smaller in refractive index than the second cladding layer. The burying layer has first regions that are contacted with and extend along respective side faces of the mesa stripe. An Al composition x of the first regions is set so that the first regions are lattice-matched to GaAs. The burying layer has second regions that are joined with respective bottom ends of the first regions and extend along the active layer. An Al composition x of the second regions is set so that the second regions are lattice-matched or are not lattice-matched to GaAs.

Semiconductor laser with alinp or algainp burying layer

In a multiprocessor system, a communication register is partitioned into groups of word storage locations and one of the groups is further partitioned into subgroups associated respectively with the processors. An access controller accesses any groups of the communication register when a system program is being processed and accesses one of the subgroup when a user program is being processed. A write controller is responsive to a test & set instruction of first occurrence from a common bus for assembling a lock work with a data word, a control field and a counter field containing a variable count. The control field of the lock word is set to a first binary state when it is assembled and reset to a second binary state when deassembled. In response to a load instruction from the common bus, either the data word from the bus or lock word is stored into a specified storage area of a communication register. A read controller reads contents of an addressed location of the communication register onto the common bus in response to a save instruction. Test & set instruction of a subsequent occurrence causes the variable count in the stored lock word to be decremented as long as the control field remains set to the first binary state. When the count reduces to zero, a signal is applied to the common bus indicating the occurrence of a dead lock.

Growing community of inventors

Tokyo, Japan

Ryuji Kobayashi