Mitsubishi Gas Chemical Company, Inc.

Mitsubishi Gas Chemical, Inc.

Ryuji Hasemi

Hidetoshi Ikeda

Tetsuo Aoyama

Hideyuki Sato

Akinori Tanaka

Umi Yokobori

Yasushi Higuchi

Taketo Ikeno

Mayumi Hada

Takafumi Oda

Ryoji Otaki

Taketo Maruyama

Rieko Nakano

Shota Arakawa

Keiichi Iwata

Hiroshi Machida

Ryuji Sotoaka

Hideto Gotoh

Tsuneaki Masuda

Seiji Uchiyama

Fukusaburo Ishihara

Masayuki Kojima

Masaki Sugita

Tsuyoshi Matsui

Hiroyuki Matsushita

Yoshikazu Ohira

Kazusato Hara

Takafumi Tokunaga

Kazuhisa Usuami

Shunji Sasabe

Yoshimi Torii

Provided is a method for producing a diol represented by Formula (1), the method including using water as a solvent to carry out a cyclodehydration reaction of a 1,4-cyclohexanedione derivative represented by Formula (2) with a triol represented by Formula (3) to produce a diol represented by Formula (1). In Formula (1), Rand Reach independently denote a hydrocarbon group, and Reach independently denotes a hydrogen atom, a heteroatom-containing group, a halogen atom-containing group, a linear alkyl group having from 1 to 6 carbon atoms, a branched alkyl group having from 3 to 6 carbon atoms, or a group including an aryl group and having from 6 to 12 carbon atoms. 

Production method of diol

Provided is a urethane (meth)acrylate capable of achieving high strength and high elongation, as well as a method for manufacturing a urethane (meth)acrylate, a curable composition, a cured article, and a method for manufacturing a cured article. The urethane (meth)acrylate contains a structural unit derived from polycarbonate diol, a structural unit derived from polyisocyanate, and a hydroxy group-containing (meth)acrylate-derived group, the polycarbonate diol containing one or more types of structural unit represented by formula (1) wherein each of R, R, Rand Rindependently represents an aliphatic hydrocarbon group having 1 to 6 carbon atoms. 

Urethane (meth)acrylate, method for manufacturing urethane (meth)acrylate, curable composition, cured article, and method for manufacturing cured article

The invention provides a triacrylate compound represented by the following formula (1). In the formula, each R is independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or a halogen atom, Rand Rare each independently a linear or branched alkyl group having 1 to 6 carbon atoms, and Ris a linear or branched alkyl group having 1 to 6 carbon atoms or a hydroxymethyl group.

Triacrylate compounds and methods for producing the same, and compositions

A polyamide compound containing: from 25 to 50 mol % of a diamine unit, which contains an aromatic diamine unit represented by the following formula (I), in an amount of 50 mol % or more; from 25 to 50 mol % of a dicarboxylic acid unit, which contains a linear aliphatic dicarboxylic acid unit represented by the following formula (II-1) and/or an aromatic dicarboxylic acid unit represented by the following formula (II-2), in an amount in total of 50 mol % or more; and from 0.1 to 50 mol % of a constitutional unit represented by the following formula (III): wherein n represents an integer of from 2 to 18, Ar represents an arylene group, and R represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group.

Polyamide compound

There is provided a process for producing an optically active 2-alkylcysteine or a salt thereof, characterized by allowing cells of microorganism or treated products thereof having an activity of stereoselective hydrolysis of the amide bond of a 2-alkyl-L-cysteinamide or a salt thereof to act on a 2-alkylcysteinamide consisting of a mixture of D- and L-isomers or a salt thereof; and allowing the obtained 2-alkyl-L-cysteine and 2-alkyl-D-cysteinamide to react with an aldehyde or a ketone, or an acetal or ketal thereof, so as to derive therefrom a 4-alkylthiazolidine-4-carboxylic acid or a salt thereof and a 4-alkylthiazolidine-4-carboxamide or a salt thereof, thereby efficiently separating and obtaining a 2-alkyl-L-cysteine or a salt thereof, or a 2-alkyl-D-cysteine or a salt thereof. There is also provided a process for producing a 4-alkylthiazolidine-4-carboxylic acid or a salt thereof from the 2-alkylcysteine or a salt thereof.

Process for producing optically active 2-alkycysteine, derivative thereof, and processes for production

A process for producing a 2-alkylcysteinamide, which comprises hydrolysis of a 4-alkylthiazolidine-4-carboxamide represented by the general formula (2) or a salt thereof: wherein R represents a lower alkyl group having 1&#x2013;4 carbon atoms; and each of Rand Rindependently represents hydrogen or a lower alkyl group having 1&#x2013;4 carbon atoms, or Rand Rare linked together to form an alicyclic, structure having 4&#x2013;7 carbon atoms, excluding the case where both Rand Rare hydrogen, to give a 2-alkylcysteinamide represented by the general formula (1) or a salt thereof wherein R represents a lower alkyl group having 1&#x2013;4 carbon atoms. Cells of a microorganism or treated products thereof having activity of stereoselective hydrolysis of a 2-alkyl-L-cysteinamide are allowed to act on the compound represented by the general formula (1) to yield a 2-alkyl-L-cysteine.

2-alkylcysteinamide or salt thereof, process for producing these, and use of these

There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

Cleaning liquid for semiconductor devices

A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.

A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.

Method of producing semiconductor device and rinse for cleaning

A removing agent composition for a photoresist is disclosed which comprises 5 to 50% by weight of an alkanolamine, an alkoxyalkylamine or an alkoxyalkanolamine, 1 to 30% by weight of a glycol monoalkyl ether, 0.5 to 15% by weight of a sugar or a sugaralcohol, 0.01 to 10% by weight of a quaternary ammonium hydroxide, if necessary, and water as the balance; and a method of removing by the use of this composition is also disclosed herein. According to the present invention, there can be provided the removing agent composition for the photoresist which can easily remove, at a low temperature in a short time, a photoresist film applied onto an inorganic substrate in a manufacturing process of semiconductor integrated patterns, a remaining photoresist layer after dry etching or a remaining photoresist residue after ashing and which does not corrode a wiring material at all and which can be rinsed with water alone.

Removing agent composition for photoresist and method of removing

A process for producing dimethyl 2,6-naphthalene-dicarboxylate by reacting 2,6-naphthalene-dicarboxylic acid with methanol which comprises effecting the reaction at 200.degree. to 350.degree. C. in the presence of trimethyl trimellitate as an essential solvent and optionally, at least one solvent selected from methyl benzoate, methyl toluate and dimethyl o-phthalate preferably by at least two-stage continuous reaction method. The above process is capable of enhancing the rate of esterification reaction and producing purified objective product in high yield for a long period of time in a stable operation without causing any operational trouble such as corrosion and clogging the production equipment.

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Niigata, Japan

Ryuji Hasemi