Denso Corporation

Tohoku University

Ryuichiro Abe

Minekazu Sakai

Akitoshi Yamanaka

Takao Yoneyama

Kenichi Ao

Shigenori Yamauchi

Masaaki Tanaka

Tomoya Jomori

Kazuaki Mawatari

Yasuo Ando

Mikihiko Oogane

Kimiharu Kayukawa

Yasunori Ninomiya

Takamoto Furuichi

Koji Hattori

Yutaka Hayakawa

Nobuya Makino

Takafumi Nakano

Takahiro Higuchi

Yuko Fukami

Ichiharu Kondoh

Yoshio Nakajima

Yuji Koyama

A piezoelectric element includes a plurality of vibration regions that are separated from each other by a slit, and the slit is formed to have a tapered portion that is tapered from a first surface of the vibration regions on an opposite side to a support to a second surface opposite to the first surface. An electrode film is positioned inside than the slit when being viewed from a normal direction orthogonal to the first surface, and an angle formed by a side surface of the tapered portion in the vibration region and a surface parallel to the first surface is in a range of 39 to 81 degrees.

Piezoelectric element, piezoelectric device, and method of manufacturing piezoelectric element

A magnetic sensor includes: a substrate; and first and second magnetoresistive devices on one surface of the substrate. Each of the first and second magnetoresistive devices includes: a fixed layer having an easy magnetization axis perpendicular to the one surface and having a fixed magnetization direction; a free layer having a variable magnetization direction; and an intermediate layer made of a non-magnetic material and arranged between the fixed layer and the free layer. The fixed layer includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer.

Magnetic sensor and method for manufacturing said magnetic sensor

A semiconductor sensor is disclosed that includes a semiconductor substrate, a sensing portion provided on the semiconductor substrate, and a pad in electrical communication with the sensing portion and provided on the semiconductor substrate. The semiconductor sensor also includes a bonding wire in electrical communication with the pad. Furthermore, the semiconductor sensor includes a cover member with a covering portion disposed over the semiconductor substrate for covering the sensing portion such that the covering portion is separated at a distance from the sensing portion. The cover member further includes a coupling portion provided on the semiconductor substrate at an area including the pad and for enabling electrical connection of the pad with the bonding wire therethrough.

Semiconductor sensor and manufacturing method therefor

Resistor elements are formed by doping impurity into a single crystal film formed on a substrate such as a silicon-on-insulator substrate. A semiconductor device having such resistor elements is used as a detector for detecting an amount of airflow, for example. The impurity density in the single crystal silicon is made lower than 1&#xd7;10/cmto suppress a resistance change by aging especially at a temperature higher than 310&#xb0; C. To obtain a high temperature coefficient of the resistor element as well as a low resistance change by aging, the impurity density is set in a range from 4&#xd7;10/cmto 1&#xd7;10/cm, and more preferably in a range from 7&#xd7;10/cmto 1&#xd7;10/cm. As the impurity, N-type impurity such as phosphorus or P-type impurity such as boron may be used. It is preferable to use the impurity having a low diffusion coefficient to attain a low resistance change by aging.

Semiconductor device having impurity-doped resistor element

A sensor includes: a semiconductor chip having a sensing portion and a first bump; a circuit chip having a second bump; and a resin film having a groove. The semiconductor chip and the circuit chip are integrated with sandwiching the resin film therebetween. The resin film includes a first space and a second space before the first bump is bonded to the second bump. The first space faces the sensing portion. The second space is disposed on a periphery of the first space. The resin film expands when the first bump is bonded to the second bump. The second space accommodates an expanded portion of the resin film. The first space provides the groove after the first bump is bonded to the second bump.

Physical quantity sensor, method for manufacturing the same, and resin film for bonding semiconductor chip and circuit chip

A sensor device includes a board, a sensor element and a resin member made of resin. The sensor element has a displace part to be displaced in a predetermined detection direction, and detects a displace amount of the displace part in the detection direction. The sensor element is mounted and connected to the board through the resin member. The resin member is arranged between the sensor element and the board in part such that a warp of the sensor element in the detection direction due to a temperature variation is smaller than a warp of the sensor element in a direction except for the detection direction.

Sensor device

A packaging method includes ultrasonically bonding a semiconductor device and a substrate together via bumps that include gold as a main component thereof. A contact surface of a primary bump on a surface of an aluminum pad on one side of the substrate contacts and is ultrasonically bonded to a distal end surface of each opposed secondary bump on one side of the semiconductor device. An area of the contact surface is larger than that of the opposed distal end surface. By this method, damage to the substrate from the ultrasonic can be reduced without using a reinforcing layer.

Packaging method

A sensor device includes a sensor chip having a movable portion on one surface, a circuit chip laminated with the sensor chip to be opposite to the movable portion of the sensor chip, and a bump located between the sensor chip and the circuit chip. In the sensor device, the sensor chip and the circuit chip are electrically connected through the bump, and the movable portion of the sensor chip is separated from the circuit chip by a space using the bump. Accordingly, it can effectively restrict parasitic capacity of an electric connecting portion between both the chips from being changed by an impact. For example, the sensor device can be used as an angular velocity sensor device having a vibrator as the movable portion.

Growing community of inventors

Ichinomiya, Japan

Ryuichiro Abe