Ngk Insulators, Inc.

Ryuichi Ohuchi

Minoru Imaeda

Tatsuo Kawaguchi

Kazuaki Yamaguchi

Nobuyuki Kokune

Shoji Sogo

An equipment is disclosed for producing a single crystal in each of plural containers by thermally treating a raw material for the single crystal each charged in each of the container, including heaters provided corresponding to each of the containers, an elevator to move each of the containers upward and downward relatively to the respective one of the heaters, and a connecting member to connect at least one of the container and the heater of each of plural sets of the containers and the heaters mechanically to the elevator, wherein each container is moved vertically relatively to the respective one of the heaters by driving the elevator and passed through an area of thermal treatment formed by the heater to continuously form a melt in the raw material inside the container, and the single crystal is continuously produced in the container by solidifying the melt.

Single crystal-manufacturing equipment and a method for manufacturing the same

Equipment for producing a single crystal in each of a plurality containers by thermally treating raw material in each container, the equipement including heaters corresponding to each of the containers, an elevator to move each of the containers up or down relative to each respective heater, and a connecting member to connect at least one of the container and the heater, each of a plurality of sets of the containers and the heaters, mechanically to the elevator, wherein each container is moved vertically relative to the respective one of the heaters by driving the elevator. The container is passed through an area of thermal treatment formed by the heater so that a melt is continuously formed in the raw material inside the container. The single crystal is continuously produced in the container by solidifying the melt.

A process is disclosed for producing a film of an oxide type single crystal on a substrate of such an oxide type single crystal by epitaxially growing the oxide type single crystal on the substrate through contacting the substrate onto a melt in an overcooled state. The substrate of the oxide type single crystal is contacted with the melt held in a first furnace, and the substrate of the oxide type single crystal is held inside a second furnace separated from said first furnace, and the temperature of the substrate is adjusted in the second furnace. An oxide type single crystal film-producing apparatus is also disclosed.

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Nagoya, Japan

Ryuichi Ohuchi