Mitsubishi Heavy Industries Limited

Canon Anelva Corporation

Mitsubishi Heavy Industries Machinery Systems, Ltd.

Ryuichi Matsuda

Masahiko Inoue

Kazuto Yoshida

Hitoshi Sakamoto

Shingo Nishikata

Koichi Hamamoto

Tadashi Shimazu

Naoki Yahata

Hiroki Uchida

Shinya Ishii

Hiroyuki Daigo

Toshihiko Nishimori

Yoshiyuki Ooba

Yuki Uchiyama

Yuichi Kawano

Tatsuya Kimura

Tatsufumi Aoi

Katsuya Sennyu

Kengo Yamaguchi

Hirofumi Shimizu

Takuya Yamazaki

Akio Ikeda

Noriaki Ueda

Kazunori Okihira

A solid state laser apparatus includes a plurality of cold heads, a cooling apparatus, laser media and a seed light source. The cooling apparatus is configured to cool the plurality of cold heads. The laser media are arranged in contact with each of the plurality of cold heads, and configured to amplify a first laser beam and reflect the first laser beam. The seed light source is configured to irradiate a first laser medium of the laser media with the first laser beam. The first laser medium is arranged on a first of the cold heads. The laser media are configured to reflect the first laser beam irradiated to the first laser medium to a second laser medium of the laser media. The second laser medium is arranged on a second of the cold heads. The cold heads are configured to cool the laser media.

Solid state laser apparatus

A solid-state laser device includes an inner container, an outer container, a cooling medium supply unit, and a cover section. The inner container in which a laser medium is accommodated includes an inner light-transmitting unit. An outer light-transmitting unit of the outer container is provided at a part that faces the inner light-transmitting unit and is vacuum-insulated from the inner light-transmitting unit. The cooling medium supply unit supplies a cooling medium so that the cooling medium comes in contact with a surface other than a light input and output surface in the laser medium. The cover section partitions a light-passing area from a cooling medium supply area to which the cooling medium is supplied.

Solid-state laser device

A plasma generation apparatus, and a plasma thruster configured to use the plasma generation apparatus are disclosed. The plasma generation apparatus includes a discharge vessel, a light-emitting monitor, a probe measuring instrument, a control device, and an optical axis driving unit. The discharge vessel is configured to ionize gas which is introduced to an inside thereof so as to generate plasma. The light-emitting monitor is configured to measure electron density of the plasma by emission spectra of the plasma. The probe measuring instrument is configured to measure the electron density of the plasma by a probe in the discharge vessel.

Plasma generation apparatus including measurement device and plasma thruster

An input coupler for an accelerating cavity includes a cylindrical external conductor; a cylindrical internal conductor arranged coaxially with the external conductor, inside of which a heating medium circulates; a plate provided between the inner surface of the external conductor and the outer surface of the internal conductor; a cooling part for cooling the plate from the external conductor side to the freezing point of water or lower; and a heat insulating part provided on the part at which the internal conductor and the plate are connected, the heat insulating part having lower thermal conductivity than that of the internal conductor. The plate is connected to the internal conductor via the heat insulating part.

Input coupler for accelerating cavity and accelerator

A laser oscillation device includes: a refrigerant container; at least one cartridge which is attached to the refrigerant container and which includes a laser gain medium and an incidence path section for guiding laser seed light to the laser gain medium; at least one nozzle for spraying a refrigerant to the laser gain medium, the at least one nozzle being disposed inside the refrigerant container, and a vacuum heat insulating container housing the refrigerant container inside and forming a vacuum insulation layer on an outer peripheral side of the refrigerant container. The cartridge is disposed so as to be insertable and removable with respect to the refrigerant container along a longitudinal direction of the laser gain medium.

Laser oscillation device

A directed-energy irradiating apparatus includes a switch which selects one of an FEL apparatus and an HPM apparatus to be supplied with a microwave based on external environmental data. A target is destroyed even in a situation in which a destruction effect by an FEL beam cannot be expected, while maintaining a destruction ability for the target by the FEL beam.

Directed-energy irradiating apparatus

Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (), a process chamber () is supplied with an inert gas for carrying in and out the substrate (), pressure fluctuation in the process chamber () is adjusted to be within a prescribed range, and plasma () of the inert gas supplied in the process chamber () is generated. The density of the plasma () in the transfer area of the substrate () is reduced by controlling plasma power to be in a prescribed range, and the substrate () is carried in and out to and from a supporting table ().

Plasma processing apparatus and plasma processing method

Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (), the inner cylinder () composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions () in point-contact with the vacuum chamber () are provided on the lower end portion of the inner cylinder (), the alumite film () on the leading end portion () of each of the protruding portion () is removed, and the inner cylinder and the vacuum chamber () are electrically connected to each other.

A directed-energy irradiating apparatus includes an FEL apparatus and an HPM apparatus. The FEL apparatus accelerates free electrons by using a microwave supplied from a microwave source to irradiate an FEL beam and outputs a remaining microwave. The HPM apparatus irradiates an HPM beam generated based on the remaining microwave outputted from the FEL apparatus. It is possible to destroy a target even in a situation that a destruction effect by the FEL beam cannot expected, while maintaining the destruction ability of the FEL beam.

A plasma film deposition apparatus (plasma processing apparatus) includes a second antennadisposed around an antennaand located outwardly of a ceiling surface. The second antennais supplied with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antennaby a power supply. Lines of magnetic force F, heading in a direction opposite to the direction of lines of magnetic force Fappearing at the site of the antenna, are thereby generated at the site of the second antenna. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated over a wide range within a tubular container

Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method

A Clgas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Clgas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus

Barrier metal film production method

A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Clgas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuCl). The precursor (CuCl) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

Metal film production apparatus

A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.

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Takasago, Japan

Ryuichi Matsuda