Rohm Co., Ltd.

Ryuichi Furutani

Yuji Ishimatsu

A semiconductor device Aincludes a substrate, a conductive sectionformed on the substrateand including a conductive material, a leadA located on the substrate, a semiconductor chipA located on the leadA, a control chipG located on the substrateand electrically connected to the conductive sectionand the semiconductor chipA for controlling an operation of the semiconductor chipA, and a resincovering the semiconductor chipA, the control chipG, at least a part of the substrateand a part of the leadA. This configuration contributes to achieving a higher level of integration of the semiconductor device.

Semiconductor device

The power converter Aincludes a semiconductor device B, and a substrate H on which the semiconductor device Bis mounted, where the semiconductor device Bincludes a control chip constituting a primary control circuit, a semiconductor chip constituting a secondary power circuit, and a transmission circuit for electrically insulating the primary control circuit and the secondary power circuit and for signal transmission between the primary control circuit and the secondary power circuit. The substrate H has a conductive portion K. The power converter Aincludes a connecting terminal Tdisposed on the substrate H and electrically connected to the conductive portion K. The power converter Aincludes a conductive path Dthat is at least partially formed by the conductive portion K of the substrate H, and that electrically connects the primary control circuit and the connecting terminal T. Such a configuration contributes to downsizing the power converter A

Power conversion device

A semiconductor device includes a lead, a first semiconductor element, and a sealing resin that covers at least a portion of each of the lead and the first semiconductor element. The lead has an obverse surface on which the first semiconductor element is mounted, and a reverse surface opposite to the obverse surface. The lead includes a first portion having a first surface. The first surface is located between the obverse surface and the reverse surface in the z direction in which the obverse surface and the reverse surface are separated from each other. The first surface of the lead is covered with the sealing resin, and is configured with a plurality of protruding areas and a plurality of recessed areas arranged alternately as viewed in the z direction.

Growing community of inventors

Kyoto, Japan

Ryuichi Furutani