Sharp Kabushiki Kaisha Corporation

Ryuhichi Sogabe

Yasuo Kan

Kazuhiko Wada

An AlGaInPAs-based semiconductor laser device includes a substrate, an n-type clad layer, an n-type guide layer, an active layer, a p-type guide layer composed of AlGaInP containing Mg as a dopant, a p-type clad layer composed of AlInP containing Mg as a dopant, and a p-type cap layer composed of GaAs. Further, the semiconductor laser device has, between the p-type guide layer and the p-type clad layer, a Mg-atomic concentration peak which suppresses inflow of electrons, moving from the n-type clad layer to the active layer, into the p-type guide layer or the p-type clad layer.

AlGaInPAs-based semiconductor laser device and method for producing same

A semiconductor laser element that includes a stripe-shaped light-emitting region and that is formed by adhering a surface of the semiconductor laser element on a side opposite to a semiconductor substrate and a submount to each other by a solder layer includes a terrace section on a surface of the semiconductor laser element that is adhered by the solder layer, the terrace section being separated from a ridge portion, which is a current-carrying portion, by a grooved portion. A top surface of a region including the grooved portion is covered by a metal. The terrace section is divided into a plurality of portions that are disposed in a scattered manner.

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Sakai, Japan

Ryuhichi Sogabe